STB85NF55LT4
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STMicroelectronics STB85NF55LT4

Manufacturer No:
STB85NF55LT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 80A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB85NF55LT4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II series, known for its advanced 'single feature size' strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STB85NF55LT4 is available in the D²PAK package and is designed for high-current switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)55V
Gate-Source Voltage (VGS)±15V
Continuous Drain Current (ID) at TC = 25 °C80A
Pulsed Drain Current (IDM)320A
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 40 A0.0060 - 0.008
Gate Threshold Voltage (VGS(th))1 - 2.5V
Operating Junction Temperature (TJ)-55 to 175°C
Thermal Resistance Junction-Case (Rthj-case)0.5°C/W
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W

Key Features

  • Low threshold drive for easy gate control.
  • High packing density resulting in low on-resistance.
  • Rugged avalanche characteristics for reliability in harsh conditions.
  • Less critical alignment steps for improved manufacturing reproducibility.
  • Available in D²PAK package for efficient heat dissipation.
  • ECOPACK® compliant for environmental sustainability.

Applications

The STB85NF55LT4 is designed for various high-current switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STB85NF55LT4?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the continuous drain current rating at 25 °C?
    The continuous drain current (ID) at 25 °C is 80 A.
  3. What is the typical on-resistance of the STB85NF55LT4?
    The typical static drain-source on resistance (RDS(on)) at VGS = 10 V and ID = 40 A is 0.0060 - 0.008 Ω.
  4. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(th)) range is 1 to 2.5 V.
  5. What are the thermal resistance values for junction-case and junction-ambient?
    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
  6. What package is the STB85NF55LT4 available in?
    The STB85NF55LT4 is available in the D²PAK package.
  7. Is the STB85NF55LT4 environmentally compliant?
    Yes, the STB85NF55LT4 is ECOPACK® compliant, meeting environmental sustainability standards.
  8. What are some typical applications for the STB85NF55LT4?
    Typical applications include power supplies, DC-DC converters, motor control systems, industrial automation, and automotive systems.
  9. What is the maximum operating junction temperature?
    The maximum operating junction temperature (TJ) is 175 °C.
  10. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:4050 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STP85NF55L
STP85NF55L
MOSFET N-CH 55V 80A TO220AB

Similar Products

Part Number STB85NF55LT4 STB85NF55T4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 5 V 150 nC @ 10 V
Vgs (Max) ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4050 pF @ 25 V 3700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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