STB85NF55T4
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STMicroelectronics STB85NF55T4

Manufacturer No:
STB85NF55T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 80A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB85NF55T4 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of the STripFET II family and is known for its high performance and reliability. It is packaged in a D2PAK (TO-263) surface mount package, making it suitable for a variety of high-power applications. The MOSFET is characterized by its low on-state resistance and high current handling capabilities, making it an ideal choice for automotive and industrial power management systems.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain Source Voltage (Vds)55 V
Continuous Drain Current (Id)40 A
Maximum Drain Current (Id Max)80 A
On-State Resistance (Rds(on))6.2 mΩ (typ.)
Mounting TypeSMD (Surface Mount)
Package TypeD2PAK (TO-263)
Number of Pins3
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-state resistance (Rds(on)) of 6.2 mΩ (typ.) for efficient power handling.
  • High current capability with a maximum drain current of 80 A.
  • Automotive-grade reliability and performance.
  • D2PAK (TO-263) surface mount package for easy integration into high-power systems.
  • Wide operating temperature range from -55°C to 150°C.

Applications

The STB85NF55T4 is designed for use in various high-power applications, including:

  • Automotive systems such as power steering, braking, and engine control.
  • Industrial power management systems, including motor control and power supplies.
  • High-performance DC-DC converters and power inverters.
  • Electric vehicle (EV) and hybrid electric vehicle (HEV) systems.

Q & A

  1. What is the maximum drain source voltage of the STB85NF55T4?
    The maximum drain source voltage (Vds) is 55 V.
  2. What is the continuous drain current rating of the STB85NF55T4?
    The continuous drain current (Id) is 40 A.
  3. What is the typical on-state resistance of the STB85NF55T4?
    The typical on-state resistance (Rds(on)) is 6.2 mΩ.
  4. What is the package type of the STB85NF55T4?
    The package type is D2PAK (TO-263).
  5. What is the operating temperature range of the STB85NF55T4?
    The operating temperature range is from -55°C to 150°C.
  6. Is the STB85NF55T4 suitable for automotive applications?
    Yes, it is an automotive-grade N-channel power MOSFET.
  7. What are some common applications of the STB85NF55T4?
    Common applications include automotive systems, industrial power management, DC-DC converters, and electric vehicle systems.
  8. How many pins does the STB85NF55T4 have?
    The STB85NF55T4 has 3 pins.
  9. What is the maximum drain current of the STB85NF55T4?
    The maximum drain current (Id Max) is 80 A.
  10. Where can I find detailed specifications for the STB85NF55T4?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STP85NF55
STP85NF55
MOSFET N-CH 55V 80A TO220AB

Similar Products

Part Number STB85NF55T4 STB85NF55LT4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 110 nC @ 5 V
Vgs (Max) ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V 4050 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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