Overview
The STB80NF03L-04T4 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II series, known for its exceptional electrical and thermal characteristics. The MOSFET features a low on-resistance (RDS(on)) of 0.0035 Ω, making it suitable for high-current, high-speed switching applications. It is available in D2PAK, I2PAK, and TO-220 packages, offering flexibility in design and implementation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source Voltage) | 30 | V |
| VGS (Gate-source Voltage) | ±20 | V |
| ID (Drain Current, continuous at TC = 25°C) | 80 | A |
| IDM (Drain Current, pulsed) | 320 | A |
| Ptot (Total Dissipation at TC = 25°C) | 300 | W |
| Tj (Max. Operating Junction Temperature) | 175 | °C |
| RDS(on) (Static Drain-source On Resistance at VGS = 10 V, ID = 40 A) | 0.0035 | Ω |
| dv/dt (Peak Diode Recovery voltage slope) | 2 | V/ns |
| EAS (Single Pulse Avalanche Energy) | 2.3 | J |
Key Features
- Extremely low on-resistance (RDS(on)) of 0.0035 Ω, ensuring minimal power loss.
- Exceptional dv/dt capability, making it robust against high voltage slopes.
- 100% avalanche tested, ensuring ruggedness and reliability.
- Low threshold drive, facilitating easy control and switching.
- High packing density due to the 'Single Feature Size™' strip-based process, enhancing manufacturing reproducibility.
Applications
- High current, high speed switching applications.
- Motor control and audio amplifiers.
- DC-DC and DC-AC converters.
- Automotive environments such as fuel injection, ABS, airbag systems, and lamp drivers.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB80NF03L-04T4?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance (RDS(on)) is 0.0035 Ω at VGS = 10 V and ID = 40 A.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 80 A.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 320 A.
- What are the typical applications of the STB80NF03L-04T4?
Typical applications include high current, high speed switching, motor control, audio amplifiers, DC-DC and DC-AC converters, and automotive environments.
- What is the maximum operating junction temperature (Tj)?
The maximum operating junction temperature (Tj) is 175°C.
- What is the single pulse avalanche energy (EAS) of this MOSFET?
The single pulse avalanche energy (EAS) is 2.3 J.
- What are the available package types for the STB80NF03L-04T4?
The available package types are D2PAK, I2PAK, and TO-220.
- What is the peak diode recovery voltage slope (dv/dt)?
The peak diode recovery voltage slope (dv/dt) is 2 V/ns.
- Is the STB80NF03L-04T4 100% avalanche tested?
Yes, the STB80NF03L-04T4 is 100% avalanche tested.
