STB45N40DM2AG
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STMicroelectronics STB45N40DM2AG

Manufacturer No:
STB45N40DM2AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 400V 38A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB45N40DM2AG is a high-voltage N-channel Power MOSFET manufactured by STMicroelectronics. It is part of the MDmesh™ DM2 fast recovery diode series, known for its very low recovery charge (Qrr) and time (trr). This MOSFET is designed to offer high performance and reliability in various power management applications.

Key Specifications

Parameter Value
VDS (Max Drain-Source Voltage) 400 V
RDS(on) (Typical Drain-Source On-Resistance) 0.063 Ohm
ID (Max Continuous Drain Current) 38 A
TJ (Max Junction Temperature) 150 °C
TJ (Min Operating Junction Temperature) -55 °C
PD (Max Power Dissipation) 250 W
Package Tape and Reel

Key Features

  • Very low recovery charge (Qrr) and time (trr) due to the MDmesh™ DM2 technology.
  • High voltage rating of 400 V, making it suitable for high-power applications.
  • Low RDS(on) of 0.063 Ohm, reducing power losses and improving efficiency.
  • High continuous drain current of 38 A, supporting demanding power requirements.
  • Wide operating temperature range from -55 °C to 150 °C, ensuring reliability in various environments.

Applications

  • Automotive systems, including power steering, power windows, and other high-power applications.
  • Industrial power supplies and motor control systems.
  • Renewable energy systems, such as solar and wind power inverters.
  • High-power switching applications, including DC-DC converters and power amplifiers.

Q & A

  1. What is the maximum drain-source voltage of the STB45N40DM2AG MOSFET?

    The maximum drain-source voltage is 400 V.

  2. What is the typical drain-source on-resistance of the STB45N40DM2AG?

    The typical drain-source on-resistance is 0.063 Ohm.

  3. What is the maximum continuous drain current of the STB45N40DM2AG?

    The maximum continuous drain current is 38 A.

  4. What is the maximum junction temperature of the STB45N40DM2AG?

    The maximum junction temperature is 150 °C.

  5. What is the minimum operating temperature of the STB45N40DM2AG?

    The minimum operating temperature is -55 °C.

  6. What is the maximum power dissipation of the STB45N40DM2AG?

    The maximum power dissipation is 250 W.

  7. In what package is the STB45N40DM2AG available?

    The STB45N40DM2AG is available in Tape and Reel packaging.

  8. What technology does the STB45N40DM2AG use?

    The STB45N40DM2AG uses the MDmesh™ DM2 technology.

  9. What are some common applications for the STB45N40DM2AG?

    Common applications include automotive systems, industrial power supplies, renewable energy systems, and high-power switching applications.

  10. Why is the STB45N40DM2AG suitable for high-power applications?

    The STB45N40DM2AG is suitable for high-power applications due to its high voltage rating, low on-resistance, and high continuous drain current.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:72mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2600 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB45N40DM2AG STB45N50DM2AG STB45N60DM2AG
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 35A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 19A, 10V 84mOhm @ 17.5A, 10V 90mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 57 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V 2600 pF @ 100 V 2500 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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