Overview
The STB45N60DM2AG is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh DM2 fast-recovery diode series. This device is designed to offer very low recovery charge (Qrr) and time (trr), making it suitable for high-efficiency applications. It is packaged in a D²PAK (TO-263) surface mount package, which is widely used in various power management and automotive systems.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 600 V |
| On-State Resistance (Rds(on)) | 0.085 Ω (typ.) |
| Continuous Drain Current (Id) | 34 A (at Tc = 25°C) |
| Pulse Drain Current (Idm) | 136 A |
| Power Dissipation (Pd) | 250 W (at Tc = 25°C) |
| Package | D²PAK (TO-263) |
| Recovery Charge (Qrr) | Very low |
| Recovery Time (trr) | Very low |
Key Features
- High-voltage N-channel Power MOSFET with fast-recovery body diode
- Low recovery charge (Qrr) and recovery time (trr)
- High continuous drain current (Id) of 34 A at Tc = 25°C
- High pulse drain current (Idm) of 136 A
- High power dissipation capability of 250 W at Tc = 25°C
- D²PAK (TO-263) surface mount package for easy integration
- Automotive-grade, suitable for demanding automotive and industrial applications
Applications
The STB45N60DM2AG is designed for use in various high-power applications, including:
- Automotive systems such as electric vehicles, hybrid vehicles, and power steering systems
- Industrial power supplies and motor control systems
- High-efficiency DC-DC converters and power management systems
- Power factor correction (PFC) circuits
Q & A
- What is the voltage rating of the STB45N60DM2AG?
The voltage rating (Vds) of the STB45N60DM2AG is 600 V. - What is the typical on-state resistance of the STB45N60DM2AG?
The typical on-state resistance (Rds(on)) is 0.085 Ω. - What is the continuous drain current of the STB45N60DM2AG?
The continuous drain current (Id) is 34 A at Tc = 25°C. - What is the pulse drain current of the STB45N60DM2AG?
The pulse drain current (Idm) is 136 A. - What is the power dissipation capability of the STB45N60DM2AG?
The power dissipation capability (Pd) is 250 W at Tc = 25°C. - What package type is the STB45N60DM2AG available in?
The STB45N60DM2AG is available in a D²PAK (TO-263) surface mount package. - What are the key benefits of the fast-recovery body diode in the STB45N60DM2AG?
The fast-recovery body diode offers very low recovery charge (Qrr) and recovery time (trr), enhancing the overall efficiency of the system. - Is the STB45N60DM2AG suitable for automotive applications?
Yes, the STB45N60DM2AG is automotive-grade and suitable for demanding automotive and industrial applications. - What are some common applications of the STB45N60DM2AG?
Common applications include automotive systems, industrial power supplies, high-efficiency DC-DC converters, and power factor correction (PFC) circuits. - Where can I find detailed specifications and datasheets for the STB45N60DM2AG?
Detailed specifications and datasheets can be found on the official STMicroelectronics website, as well as on distributor websites such as Digi-Key and TME.
