Overview
The STB30N80K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its proprietary vertical structure, which significantly reduces on-resistance and gate charge, making it ideal for applications requiring high power density and efficiency. The STB30N80K5 is packaged in a D²PAK (TO-263) package, which is suitable for a variety of high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 800 | V |
| Gate-Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 24 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 15 | A |
| Pulsed Drain Current (IDM) | 96 | A |
| Total Dissipation at TC = 25 °C (PTOT) | 250 | W |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 12 A | 0.15 (typ.), 0.18 (max.) | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 50 | °C/W |
Key Features
- Industry’s lowest RDS(on) x area, ensuring high power density and efficiency.
- Industry’s best Figure of Merit (FoM), enhancing overall performance.
- Ultra-low gate charge, reducing switching losses and improving high-frequency operation.
- 100% avalanche tested, ensuring robustness and reliability under various operating conditions.
- Zener-protected, providing additional protection against voltage spikes.
Applications
- Switching applications, including power supplies, motor control, and high-frequency inverters.
- High-power electronic devices requiring efficient and reliable power management.
- Industrial and automotive systems where high voltage and current handling are necessary.
Q & A
- What is the maximum drain-source voltage of the STB30N80K5?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance of the STB30N80K5?
The typical static drain-source on-resistance (RDS(on)) is 0.15 Ω at VGS = 10 V and ID = 12 A.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 24 A.
- What is the thermal resistance junction-case of the STB30N80K5?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.
- Is the STB30N80K5 100% avalanche tested?
- What package type is the STB30N80K5 available in?
The STB30N80K5 is available in a D²PAK (TO-263) package.
- What are the key features of the MDmesh™ K5 technology used in the STB30N80K5?
The MDmesh™ K5 technology offers the industry’s lowest RDS(on) x area, ultra-low gate charge, and the best Figure of Merit (FoM).
- What are some common applications for the STB30N80K5?
- What is the maximum storage temperature range for the STB30N80K5?
The storage temperature range is -55 to 150 °C.
- Is the STB30N80K5 Zener-protected?
