Overview
The SCTWA35N65G2V is a high-performance silicon carbide (SiC) Power MOSFET developed by STMicroelectronics. This device leverages ST’s advanced and innovative 2nd generation SiC MOSFET technology, offering remarkably low on-resistance per unit area and excellent switching performance. The SCTWA35N65G2V is designed to operate in a wide range of industrial and automotive applications, benefiting from its high temperature handling capability and robust intrinsic body diode.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| Technology | SiCFET (Silicon Carbide) | |
| FET Type | N-Ch | |
| No. of Channels | 1 | |
| Drain-to-Source Voltage [Vdss] | 650 | V |
| Drain Current | 45 | A |
| On-Resistance [Rds(on)] | 67 mΩ (max.) | |
| Input Capacitance | 1370 pF | |
| Power Dissipation | 240 W | |
| Operating Temperature Range | -55°C to +200°C | |
| Package Style | TO-247-4 | |
| Mounting Method | Through Hole |
Key Features
- Very tight variation of on-resistance vs. temperature
- Very fast and robust intrinsic body diode
- Low capacitance
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- Gate drive compatible with existing ICs
- Very high switching frequency operation and very low switching losses
Applications
- Switching mode power supply
- EV chargers
- DC-DC converters
- Industrial motor control
Q & A
- What is the drain-to-source voltage rating of the SCTWA35N65G2V?
The drain-to-source voltage rating is 650 V.
- What is the maximum drain current of the SCTWA35N65G2V?
The maximum drain current is 45 A.
- What is the on-resistance of the SCTWA35N65G2V?
The on-resistance is 67 mΩ (max.).
- What is the operating temperature range of the SCTWA35N65G2V?
The operating temperature range is -55°C to +200°C.
- What package style is the SCTWA35N65G2V available in?
The SCTWA35N65G2V is available in the TO-247-4 package style.
- What are some of the key applications of the SCTWA35N65G2V?
Key applications include switching mode power supply, EV chargers, DC-DC converters, and industrial motor control.
- Does the SCTWA35N65G2V have a robust intrinsic body diode?
Yes, the SCTWA35N65G2V features a very fast and robust intrinsic body diode.
- Is the SCTWA35N65G2V compatible with existing gate drive ICs?
Yes, the SCTWA35N65G2V is gate drive compatible with existing ICs.
- What is the thermal resistance junction-to-case of the SCTWA35N65G2V?
The thermal resistance junction-to-case is 0.72 °C/W.
- What is the maximum total power dissipation of the SCTWA35N65G2V at TC = 25 °C?
The maximum total power dissipation is 240 W.
