SCTW35N65G2V
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STMicroelectronics SCTW35N65G2V

Manufacturer No:
SCTW35N65G2V
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 650V 45A HIP247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SCTW35N65G2V is a silicon carbide (SiC) Power MOSFET developed by STMicroelectronics using their advanced and innovative 2nd generation SiC MOSFET technology. This device is designed to offer high performance and efficiency in various power management applications. The SCTW35N65G2V is characterized by its high voltage and current handling capabilities, making it suitable for demanding environments.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)650 V
Drain Current (Id)45 A
Pulsed Drain Current (Idp)90 A
On-State Resistance (Rds(on))55 mΩ
Type of TransistorN-MOSFET
PolarizationUnipolar

Key Features

  • High voltage and current handling capabilities.
  • Low on-state resistance (Rds(on)) of 55 mΩ.
  • Developed using ST's advanced 2nd generation SiC MOSFET technology.
  • High efficiency and performance in power management applications.
  • Automotive-grade, suitable for demanding environments.

Applications

The SCTW35N65G2V is designed for use in various high-power applications, including:

  • Electric vehicles and hybrid electric vehicles.
  • Industrial power supplies and converters.
  • Renewable energy systems such as solar and wind power.
  • High-power motor drives and control systems.

Q & A

  1. What is the maximum drain-source voltage of the SCTW35N65G2V?
    The maximum drain-source voltage is 650 V.
  2. What is the continuous drain current rating of the SCTW35N65G2V?
    The continuous drain current rating is 45 A.
  3. What is the pulsed drain current rating of the SCTW35N65G2V?
    The pulsed drain current rating is 90 A.
  4. What is the on-state resistance (Rds(on)) of the SCTW35N65G2V?
    The on-state resistance is 55 mΩ.
  5. What type of transistor is the SCTW35N65G2V?
    The SCTW35N65G2V is an N-MOSFET.
  6. What technology is used in the SCTW35N65G2V?
    The SCTW35N65G2V is developed using ST's advanced 2nd generation SiC MOSFET technology.
  7. Is the SCTW35N65G2V suitable for automotive applications?
    Yes, the SCTW35N65G2V is automotive-grade.
  8. What are some typical applications of the SCTW35N65G2V?
    Typical applications include electric vehicles, industrial power supplies, renewable energy systems, and high-power motor drives.
  9. Where can I find the datasheet for the SCTW35N65G2V?
    The datasheet can be found on STMicroelectronics' official website or through distributors like Mouser and TME.
  10. What are the benefits of using SiC MOSFETs like the SCTW35N65G2V?
    SIC MOSFETs offer high efficiency, low on-state resistance, and high voltage and current handling capabilities, making them ideal for high-power applications.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V, 20V
Rds On (Max) @ Id, Vgs:67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):240W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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Similar Products

Part Number SCTW35N65G2V SCTWA35N65G2V
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V 72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA 3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V 73 nC @ 20 V
Vgs (Max) +22V, -10V +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V 73000 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 240W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package HiP247™ TO-247 Long Leads
Package / Case TO-247-3 TO-247-3

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