SCTW35N65G2V
  • Share:

STMicroelectronics SCTW35N65G2V

Manufacturer No:
SCTW35N65G2V
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
SICFET N-CH 650V 45A HIP247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SCTW35N65G2V is a silicon carbide (SiC) Power MOSFET developed by STMicroelectronics using their advanced and innovative 2nd generation SiC MOSFET technology. This device is designed to offer high performance and efficiency in various power management applications. The SCTW35N65G2V is characterized by its high voltage and current handling capabilities, making it suitable for demanding environments.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)650 V
Drain Current (Id)45 A
Pulsed Drain Current (Idp)90 A
On-State Resistance (Rds(on))55 mΩ
Type of TransistorN-MOSFET
PolarizationUnipolar

Key Features

  • High voltage and current handling capabilities.
  • Low on-state resistance (Rds(on)) of 55 mΩ.
  • Developed using ST's advanced 2nd generation SiC MOSFET technology.
  • High efficiency and performance in power management applications.
  • Automotive-grade, suitable for demanding environments.

Applications

The SCTW35N65G2V is designed for use in various high-power applications, including:

  • Electric vehicles and hybrid electric vehicles.
  • Industrial power supplies and converters.
  • Renewable energy systems such as solar and wind power.
  • High-power motor drives and control systems.

Q & A

  1. What is the maximum drain-source voltage of the SCTW35N65G2V?
    The maximum drain-source voltage is 650 V.
  2. What is the continuous drain current rating of the SCTW35N65G2V?
    The continuous drain current rating is 45 A.
  3. What is the pulsed drain current rating of the SCTW35N65G2V?
    The pulsed drain current rating is 90 A.
  4. What is the on-state resistance (Rds(on)) of the SCTW35N65G2V?
    The on-state resistance is 55 mΩ.
  5. What type of transistor is the SCTW35N65G2V?
    The SCTW35N65G2V is an N-MOSFET.
  6. What technology is used in the SCTW35N65G2V?
    The SCTW35N65G2V is developed using ST's advanced 2nd generation SiC MOSFET technology.
  7. Is the SCTW35N65G2V suitable for automotive applications?
    Yes, the SCTW35N65G2V is automotive-grade.
  8. What are some typical applications of the SCTW35N65G2V?
    Typical applications include electric vehicles, industrial power supplies, renewable energy systems, and high-power motor drives.
  9. Where can I find the datasheet for the SCTW35N65G2V?
    The datasheet can be found on STMicroelectronics' official website or through distributors like Mouser and TME.
  10. What are the benefits of using SiC MOSFETs like the SCTW35N65G2V?
    SIC MOSFETs offer high efficiency, low on-state resistance, and high voltage and current handling capabilities, making them ideal for high-power applications.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V, 20V
Rds On (Max) @ Id, Vgs:67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):240W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$19.14
3

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP

Similar Products

Part Number SCTW35N65G2V SCTWA35N65G2V
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V 72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA 3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V 73 nC @ 20 V
Vgs (Max) +22V, -10V +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V 73000 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 240W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 200°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package HiP247™ TO-247 Long Leads
Package / Case TO-247-3 TO-247-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
BTA12-800CWRG
BTA12-800CWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC