VN2222LLG
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onsemi VN2222LLG

Manufacturer No:
VN2222LLG
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 60V 150MA TO92-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The VN2222LLG is a small signal N-Channel MOSFET produced by onsemi. This device is designed for low-power applications and is known for its high reliability and ease of use. The VN2222LLG is packaged in a TO-92 case, making it suitable for a variety of electronic circuits where space is limited. It is a Pb-Free device, aligning with modern environmental standards.

Key Specifications

Parameter Symbol Value Unit Conditions
Drain-Source Voltage VDSS 60 Vdc
Drain-Gate Voltage VDGR 60 Vdc RGS = 1.0 MΩ
Gate-Source Voltage (Continuous) VGS ±20 Vdc
Gate-Source Voltage (Non-repetitive) VGSM ±40 Vpk tp ≤ 50 μs
Drain Current (Continuous) ID 150 mAdc
Drain Current (Pulsed) IDM 1000 mAdc
Total Power Dissipation @ TA = 25°C PD 400 mW
Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C
Gate Threshold Voltage VGS(th) 0.6 to 2.5 Vdc VDS = VGS, ID = 1.0 mAdc
Static Drain-Source On-Resistance rDS(on) 7.5 to 13.5 Ω VGS = 10 Vdc, ID = 0.5 Adc

Key Features

  • Low Power Drive Requirement: The VN2222LLG requires minimal gate drive current, making it suitable for low-power applications.
  • Ease of Paralleling: The device can be easily paralleled to increase current handling capability.
  • Low Input Capacitance and Fast Switching Speeds: It features low input capacitance (Ciss = 60 pF) and fast switching speeds, enhancing its performance in high-frequency applications.
  • Excellent Thermal Stability: The MOSFET exhibits excellent thermal stability, ensuring reliable operation over a wide temperature range.
  • Integral Source-Drain Diode: The device includes an integral source-drain diode, which helps in protecting the circuit from backflow currents.
  • High Input Impedance and High Gain: It offers high input impedance and high gain, making it suitable for a variety of amplifier and switching applications.

Applications

  • General Purpose Switching: The VN2222LLG is widely used in general-purpose switching applications due to its low on-resistance and high switching speeds.
  • Amplifier Circuits: It is suitable for use in amplifier circuits where high input impedance and low noise are required.
  • Power Management: The device can be used in power management circuits, such as voltage regulators and power supplies, due to its thermal stability and low power consumption.
  • Automotive and Industrial Control Systems: Its robustness and reliability make it a good choice for automotive and industrial control systems.

Q & A

  1. What is the maximum drain-source voltage of the VN2222LLG?

    The maximum drain-source voltage (VDSS) is 60 Vdc.

  2. What is the typical gate threshold voltage of the VN2222LLG?

    The typical gate threshold voltage (VGS(th)) ranges from 0.6 to 2.5 Vdc.

  3. What is the maximum continuous drain current of the VN2222LLG?

    The maximum continuous drain current (ID) is 150 mAdc.

  4. What is the package type of the VN2222LLG?

    The VN2222LLG is packaged in a TO-92 case.

  5. Is the VN2222LLG Pb-Free?

    Yes, the VN2222LLG is a Pb-Free device.

  6. What is the operating temperature range of the VN2222LLG?

    The operating and storage temperature range is −55 to +150°C.

  7. What are the key features of the VN2222LLG?

    The key features include low power drive requirement, ease of paralleling, low input capacitance, fast switching speeds, excellent thermal stability, and high input impedance.

  8. In what types of applications is the VN2222LLG commonly used?

    The VN2222LLG is commonly used in general-purpose switching, amplifier circuits, power management, and automotive and industrial control systems.

  9. What is the typical static drain-source on-resistance of the VN2222LLG?

    The typical static drain-source on-resistance (rDS(on)) is 7.5 to 13.5 Ω.

  10. Does the VN2222LLG have an integral source-drain diode?

    Yes, the VN2222LLG includes an integral source-drain diode.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92 (TO-226)
Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads)
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Similar Products

Part Number VN2222LLG VN2222LL VN2222LL-G
Manufacturer onsemi onsemi Microchip Technology
Product Status Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta) 150mA (Ta) 230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V 60 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 400mW (Ta) 400mW (Ta) 400mW (Ta), 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-92-3
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 Long Body (Formed Leads) TO-226-3, TO-92-3 (TO-226AA)

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