Overview
The STD5406NT4G is a high-performance power MOSFET manufactured by onsemi. This single N-channel MOSFET is packaged in a DPAK (TO-252) case and is designed for high-current applications. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. The device is Pb-free and RoHS compliant, ensuring environmental sustainability. With its low RDS(on) and high current capability, the STD5406NT4G is an excellent choice for various power management and control systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 70 | A |
| Continuous Drain Current (TC = 125°C) | ID | 40 | A |
| Power Dissipation (TC = 25°C) | PD | 100 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 150 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 8.7 - 10 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 3.5 | V |
| Forward Transconductance (VGS = 10 V, ID = 10 A) | gFS | 19 | S |
Key Features
- Low RDS(on): The STD5406NT4G features a low on-resistance, which minimizes power losses and enhances efficiency in high-current applications.
- High Current Capability: With a continuous drain current of up to 70 A at 25°C, this MOSFET is suitable for demanding power management tasks.
- Low Gate Charge: The device has a low gate charge, which improves switching performance and reduces the power required for gate drive.
- AEC-Q101 Qualified and PPAP Capable: This MOSFET meets the stringent requirements of the automotive industry, ensuring reliability and performance in harsh environments.
- Pb-Free and RoHS Compliant: The STD5406NT4G is environmentally friendly, adhering to global standards for lead-free and RoHS compliance.
Applications
- Electronic Brake Systems: The high current and low on-resistance make it ideal for electronic brake systems where reliability and performance are critical.
- Electronic Power Steering: Suitable for power steering systems due to its high current capability and low power losses.
- Bridge Circuits: The STD5406NT4G can be used in bridge circuits for motor control and other high-power applications.
Q & A
- What is the maximum drain-to-source voltage of the STD5406NT4G?
The maximum drain-to-source voltage is 40 V.
- What is the continuous drain current at 25°C?
The continuous drain current at 25°C is 70 A.
- Is the STD5406NT4G AEC-Q101 qualified?
Yes, the STD5406NT4G is AEC-Q101 qualified and PPAP capable.
- What is the typical on-resistance of the STD5406NT4G?
The typical on-resistance is 8.7 mΩ at VGS = 10 V and ID = 30 A.
- What are the operating junction and storage temperatures of the STD5406NT4G?
The operating junction and storage temperatures range from -55°C to 175°C.
- Is the STD5406NT4G Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What are some typical applications of the STD5406NT4G?
Typical applications include electronic brake systems, electronic power steering, and bridge circuits.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 100 W.
- What is the pulsed drain current for a pulse width of 10 μs?
The pulsed drain current is 150 A for a pulse width of 10 μs.
- What is the gate threshold voltage range?
The gate threshold voltage range is from 1.5 V to 3.5 V.
