NVTFS5C453NLTAG
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onsemi NVTFS5C453NLTAG

Manufacturer No:
NVTFS5C453NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 107A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS5C453NLTAG is a high-performance N-Channel MOSFET manufactured by onsemi. This device is designed to offer superior power handling and efficiency, making it suitable for a variety of applications that require high current and low on-resistance. The MOSFET features a single N-channel design and is packaged in a WDFN-8 case, which provides excellent thermal performance and a compact footprint.

Key Specifications

ParameterValue
Package / CaseWDFN-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Rds(on) - On Resistance3.1 mΩ (typical at Vgs = 10 V)
Id - Continuous Drain Current107 A (typical at Tc = 25°C)

Key Features

  • Low on-resistance (Rds(on)) of 3.1 mΩ, ensuring minimal power loss and high efficiency.
  • High continuous drain current (Id) of 107 A, suitable for high-power applications.
  • Compact WDFN-8 package, providing excellent thermal performance and a small footprint.
  • Single N-channel design for simplicity and reliability in circuit design.
  • High drain-source breakdown voltage (Vds) of 40 V, offering robust protection against voltage spikes.

Applications

The NVTFS5C453NLTAG MOSFET is versatile and can be used in various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial power systems, including inverters and switch-mode power supplies.
  • Consumer electronics requiring high current and low on-resistance.

Q & A

  1. What is the package type of the NVTFS5C453NLTAG MOSFET?
    The NVTFS5C453NLTAG MOSFET is packaged in a WDFN-8 case.
  2. What is the drain-source breakdown voltage (Vds) of the NVTFS5C453NLTAG?
    The drain-source breakdown voltage (Vds) is 40 V.
  3. What is the typical on-resistance (Rds(on)) of the NVTFS5C453NLTAG?
    The typical on-resistance (Rds(on)) is 3.1 mΩ at Vgs = 10 V.
  4. What is the continuous drain current (Id) rating of the NVTFS5C453NLTAG?
    The continuous drain current (Id) rating is 107 A at Tc = 25°C.
  5. In what types of applications is the NVTFS5C453NLTAG commonly used?
    The NVTFS5C453NLTAG is commonly used in power supplies, motor control systems, automotive systems, industrial power systems, and consumer electronics requiring high current and low on-resistance.
  6. Who is the manufacturer of the NVTFS5C453NLTAG MOSFET?
    The NVTFS5C453NLTAG MOSFET is manufactured by onsemi.
  7. What is the transistor polarity of the NVTFS5C453NLTAG?
    The transistor polarity is N-Channel.
  8. How many channels does the NVTFS5C453NLTAG MOSFET have?
    The NVTFS5C453NLTAG MOSFET has 1 channel.
  9. What are the key benefits of using the NVTFS5C453NLTAG MOSFET?
    The key benefits include low on-resistance, high continuous drain current, compact packaging, and high drain-source breakdown voltage.
  10. Where can I find detailed specifications and datasheets for the NVTFS5C453NLTAG?
    Detailed specifications and datasheets can be found on the official onsemi website and through authorized distributors like Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:107A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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