NVTFS5811NLTAG
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onsemi NVTFS5811NLTAG

Manufacturer No:
NVTFS5811NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 40A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS5811NLTAG is a single N-channel power MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a small footprint WDFN8 package, making it suitable for space-constrained designs. The MOSFET is lead-free and comes in tape and reel packaging for ease of use in automated assembly processes.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
ID (Continuous Drain Current)40 A
RDS(ON) (On-Resistance)6.7 mΩ
PackageWDFN8 (Pb-Free)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) of 6.7 mΩ, enhancing efficiency in power applications.
  • High continuous drain current (ID) of 40 A, suitable for high-power requirements.
  • Small footprint WDFN8 package, ideal for space-constrained designs.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.
  • Tape and reel packaging for automated assembly processes.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including battery management and power distribution.
  • Industrial control and automation.
  • Consumer electronics requiring high power efficiency.

Q & A

  1. What is the maximum drain-source voltage of the NVTFS5811NLTAG MOSFET?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 40 A.
  3. What is the on-resistance (RDS(ON)) of the NVTFS5811NLTAG?
    The on-resistance is 6.7 mΩ.
  4. What package type is used for the NVTFS5811NLTAG?
    The package type is WDFN8 (Pb-Free).
  5. Is the NVTFS5811NLTAG RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  6. What are the typical applications for the NVTFS5811NLTAG?
    Typical applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  7. What is the operating temperature range of the NVTFS5811NLTAG?
    The operating temperature range is -55°C to 150°C.
  8. How is the NVTFS5811NLTAG packaged for bulk orders?
    It is packaged in tape and reel for automated assembly processes.
  9. Where can I find detailed specifications for the NVTFS5811NLTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. Is the NVTFS5811NLTAG suitable for high-power applications?
    Yes, it is designed for high-performance and high-power applications due to its low on-resistance and high current handling capabilities.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

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NVTFS5811NLWFTAG
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NVTFS5811NLWFTWG
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Similar Products

Part Number NVTFS5811NLTAG NVTFS5811NLTWG
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 40 V
Current - Continuous Drain (Id) @ 25°C - 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 6.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id - 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 30 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1570 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 3.2W (Ta), 21W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - 8-WDFN (3.3x3.3)
Package / Case - 8-PowerWDFN

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