NVTFS5811NLTAG
  • Share:

onsemi NVTFS5811NLTAG

Manufacturer No:
NVTFS5811NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 40A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVTFS5811NLTAG is a single N-channel power MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a small footprint WDFN8 package, making it suitable for space-constrained designs. The MOSFET is lead-free and comes in tape and reel packaging for ease of use in automated assembly processes.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
ID (Continuous Drain Current)40 A
RDS(ON) (On-Resistance)6.7 mΩ
PackageWDFN8 (Pb-Free)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) of 6.7 mΩ, enhancing efficiency in power applications.
  • High continuous drain current (ID) of 40 A, suitable for high-power requirements.
  • Small footprint WDFN8 package, ideal for space-constrained designs.
  • Lead-free and RoHS compliant, ensuring environmental sustainability.
  • Tape and reel packaging for automated assembly processes.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including battery management and power distribution.
  • Industrial control and automation.
  • Consumer electronics requiring high power efficiency.

Q & A

  1. What is the maximum drain-source voltage of the NVTFS5811NLTAG MOSFET?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 40 A.
  3. What is the on-resistance (RDS(ON)) of the NVTFS5811NLTAG?
    The on-resistance is 6.7 mΩ.
  4. What package type is used for the NVTFS5811NLTAG?
    The package type is WDFN8 (Pb-Free).
  5. Is the NVTFS5811NLTAG RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  6. What are the typical applications for the NVTFS5811NLTAG?
    Typical applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  7. What is the operating temperature range of the NVTFS5811NLTAG?
    The operating temperature range is -55°C to 150°C.
  8. How is the NVTFS5811NLTAG packaged for bulk orders?
    It is packaged in tape and reel for automated assembly processes.
  9. Where can I find detailed specifications for the NVTFS5811NLTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. Is the NVTFS5811NLTAG suitable for high-power applications?
    Yes, it is designed for high-performance and high-power applications due to its low on-resistance and high current handling capabilities.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
581

Please send RFQ , we will respond immediately.

Same Series
NVTFS5811NLTWG
NVTFS5811NLTWG
MOSFET N-CH 40V 16A 8WDFN
NVTFS5811NLWFTAG
NVTFS5811NLWFTAG
MOSFET N-CH 40V 16A 8WDFN
NVTFS5811NLWFTWG
NVTFS5811NLWFTWG
MOSFET N-CH 40V 16A 8WDFN

Similar Products

Part Number NVTFS5811NLTAG NVTFS5811NLTWG
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 40 V
Current - Continuous Drain (Id) @ 25°C - 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 6.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id - 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 30 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1570 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 3.2W (Ta), 21W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - 8-WDFN (3.3x3.3)
Package / Case - 8-PowerWDFN

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3