NVS4409NT1G
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onsemi NVS4409NT1G

Manufacturer No:
NVS4409NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 700MA SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVS4409NT1G is a single N-channel MOSFET produced by onsemi, designed for small signal applications. It features advanced planar technology, which enables fast switching and low RDS(on), contributing to higher efficiency and extended battery life. This device is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. It is also Pb-free and RoHS compliant, aligning with environmental regulations.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 25 V
Gate-to-Source Voltage VGS −8.0 V
Drain Current (t < 5 s, TA = 25°C) ID 0.75 A
Continuous Drain Current (Steady State, TA = 25°C) ID 0.7 A
Continuous Drain Current (Steady State, TA = 75°C) ID 0.6 A
Power Dissipation (Steady State) PD 0.28 W
Pulsed Drain Current (tp = 10 µs) IDM 3.0 A
Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C
Source Current (Body Diode) IS 0.3 A
Lead Temperature for Soldering Purposes TL 260 °C
ESD Rating — Machine Model 25 V
Drain-to-Source On Resistance (VGS = 4.5 V, ID = 0.6 A) RDS(on) 249 mΩ

Key Features

  • Advanced planar technology for fast switching and low RDS(on)
  • Higher efficiency, extending battery life
  • AEC-Q101 qualified and PPAP capable
  • Pb-free and RoHS compliant
  • Low on-resistance: 249 mΩ at VGS = 4.5 V, ID = 0.6 A
  • High ESD rating: 25 V (Machine Model)
  • Wide operating junction temperature range: −55 to +150 °C

Applications

  • Boost and buck converters
  • Load switches
  • Battery protection circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NVS4409NT1G?

    The maximum drain-to-source voltage (VDSS) is 25 V.

  2. What is the continuous drain current at 25°C and 75°C?

    The continuous drain current is 0.7 A at 25°C and 0.6 A at 75°C.

  3. Is the NVS4409NT1G AEC-Q101 qualified?

    Yes, the NVS4409NT1G is AEC-Q101 qualified and PPAP capable.

  4. What is the typical on-resistance of the NVS4409NT1G?

    The typical on-resistance (RDS(on)) is 249 mΩ at VGS = 4.5 V, ID = 0.6 A.

  5. What are the common applications of the NVS4409NT1G?

    Common applications include boost and buck converters, load switches, and battery protection circuits.

  6. Is the NVS4409NT1G Pb-free and RoHS compliant?

    Yes, the NVS4409NT1G is Pb-free and RoHS compliant.

  7. What is the ESD rating of the NVS4409NT1G?

    The ESD rating is 25 V (Machine Model).

  8. What is the operating junction temperature range of the NVS4409NT1G?

    The operating junction temperature range is −55 to +150 °C.

  9. What is the package type of the NVS4409NT1G?

    The package type is SC-70/SOT-323.

  10. How many devices are shipped per reel?

    3000 devices are shipped per reel.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:350mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-3 (SOT323)
Package / Case:SC-70, SOT-323
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