NVMS5P02R2G
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onsemi NVMS5P02R2G

Manufacturer No:
NVMS5P02R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.95A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMS5P02R2G is a high-performance, small signal MOSFET produced by onsemi. This P-Channel, enhancement mode MOSFET is designed to provide high efficiency and reliability in various electronic applications. It features a miniature SOIC-8 surface mount package, which helps in saving board space and enhancing overall system design flexibility.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
VGS (Gate-Source Voltage)±8 V
ID (Continuous Drain Current)5.4 A
RDS(on) (On-Resistance)0.02 Ω (typical at VGS = -4.5 V)
PD (Power Dissipation)1.25 W
TJ (Junction Temperature)-55 to 150 °C
PackageSOIC-8

Key Features

  • High density power MOSFET with ultra-low RDS(on) for higher efficiency.
  • Miniature SOIC-8 surface mount package, saving board space.
  • Diode exhibits high speed with soft recovery.
  • IDSS specified at elevated temperature.
  • P-Channel, enhancement mode operation.

Applications

The NVMS5P02R2G is suitable for a variety of applications, including but not limited to:

  • Power management circuits.
  • Switching and amplification in audio and video equipment.
  • Automotive and industrial control systems.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the drain-source voltage rating of the NVMS5P02R2G?
    The drain-source voltage rating is -20 V.
  2. What is the typical on-resistance of the NVMS5P02R2G?
    The typical on-resistance is 0.02 Ω at VGS = -4.5 V.
  3. What is the continuous drain current of the NVMS5P02R2G?
    The continuous drain current is 5.4 A.
  4. What is the package type of the NVMS5P02R2G?
    The package type is SOIC-8.
  5. What is the junction temperature range of the NVMS5P02R2G?
    The junction temperature range is -55 to 150 °C.
  6. What are the key features of the NVMS5P02R2G?
    The key features include ultra-low RDS(on), high speed diode with soft recovery, and a miniature SOIC-8 package.
  7. Where can the NVMS5P02R2G be used?
    The NVMS5P02R2G can be used in power management circuits, switching and amplification in audio and video equipment, automotive and industrial control systems, and portable electronics.
  8. What is the power dissipation of the NVMS5P02R2G?
    The power dissipation is 1.25 W.
  9. Is the NVMS5P02R2G suitable for high-temperature applications?
    Yes, it is specified to operate at elevated temperatures.
  10. What is the gate-source voltage rating of the NVMS5P02R2G?
    The gate-source voltage rating is ±8 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.95A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.46
1,976

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Same Series
NTMS5P02R2G
NTMS5P02R2G
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NTMS5P02R2SG
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