NVMS5P02R2G
  • Share:

onsemi NVMS5P02R2G

Manufacturer No:
NVMS5P02R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.95A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMS5P02R2G is a high-performance, small signal MOSFET produced by onsemi. This P-Channel, enhancement mode MOSFET is designed to provide high efficiency and reliability in various electronic applications. It features a miniature SOIC-8 surface mount package, which helps in saving board space and enhancing overall system design flexibility.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
VGS (Gate-Source Voltage)±8 V
ID (Continuous Drain Current)5.4 A
RDS(on) (On-Resistance)0.02 Ω (typical at VGS = -4.5 V)
PD (Power Dissipation)1.25 W
TJ (Junction Temperature)-55 to 150 °C
PackageSOIC-8

Key Features

  • High density power MOSFET with ultra-low RDS(on) for higher efficiency.
  • Miniature SOIC-8 surface mount package, saving board space.
  • Diode exhibits high speed with soft recovery.
  • IDSS specified at elevated temperature.
  • P-Channel, enhancement mode operation.

Applications

The NVMS5P02R2G is suitable for a variety of applications, including but not limited to:

  • Power management circuits.
  • Switching and amplification in audio and video equipment.
  • Automotive and industrial control systems.
  • Portable electronics and battery-powered devices.

Q & A

  1. What is the drain-source voltage rating of the NVMS5P02R2G?
    The drain-source voltage rating is -20 V.
  2. What is the typical on-resistance of the NVMS5P02R2G?
    The typical on-resistance is 0.02 Ω at VGS = -4.5 V.
  3. What is the continuous drain current of the NVMS5P02R2G?
    The continuous drain current is 5.4 A.
  4. What is the package type of the NVMS5P02R2G?
    The package type is SOIC-8.
  5. What is the junction temperature range of the NVMS5P02R2G?
    The junction temperature range is -55 to 150 °C.
  6. What are the key features of the NVMS5P02R2G?
    The key features include ultra-low RDS(on), high speed diode with soft recovery, and a miniature SOIC-8 package.
  7. Where can the NVMS5P02R2G be used?
    The NVMS5P02R2G can be used in power management circuits, switching and amplification in audio and video equipment, automotive and industrial control systems, and portable electronics.
  8. What is the power dissipation of the NVMS5P02R2G?
    The power dissipation is 1.25 W.
  9. Is the NVMS5P02R2G suitable for high-temperature applications?
    Yes, it is specified to operate at elevated temperatures.
  10. What is the gate-source voltage rating of the NVMS5P02R2G?
    The gate-source voltage rating is ±8 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.95A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.46
1,976

Please send RFQ , we will respond immediately.

Same Series
NTMS5P02R2G
NTMS5P02R2G
MOSFET P-CH 20V 3.95A 8SOIC
NTMS5P02R2SG
NTMS5P02R2SG
MOSFET P-CH 20V 3.95A 8SOIC

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK