NTMS5P02R2G
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onsemi NTMS5P02R2G

Manufacturer No:
NTMS5P02R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.95A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS5P02R2G is a high-density power MOSFET produced by onsemi, designed for high-efficiency power management applications. This P-channel, enhancement mode MOSFET is packaged in a miniature SOIC-8 surface mount package, which saves board space and is ideal for compact designs. The device is Pb-free and RoHS compliant, making it suitable for a wide range of applications, including automotive and other sectors requiring strict quality and reliability standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage - Continuous VGS ±10 V
Continuous Drain Current @ 25°C ID -5.4 A
Continuous Drain Current @ 70°C ID -4.85 A
Thermal Resistance - Junction-to-Ambient RθJA 50 °C/W
Total Power Dissipation @ TA = 25°C PD 2.5 W
Static Drain-to-Source On-State Resistance RDS(on) 26 mΩ @ -4.5 V
Gate Threshold Voltage VGS(th) -0.65 to -1.25 V
Input Capacitance Ciss 1375 to 1900 pF
Gate Charge Qg 35 nC @ 4.5 V nC
Operating Temperature TJ -55°C to 150°C °C

Key Features

  • High-density power MOSFET with ultra-low RDS(on) for higher efficiency.
  • Miniature SOIC-8 surface mount package saves board space.
  • Diode exhibits high speed with soft recovery.
  • IDSS specified at elevated temperature.
  • Drain-to-source avalanche energy specified.
  • Pb-free and RoHS compliant.
  • NVMS prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.

Applications

The NTMS5P02R2G is suitable for power management in various portable and battery-powered products, including:

  • Computers
  • Printers
  • PCMCIA cards
  • Cellular and cordless telephones

Q & A

  1. What is the drain-to-source voltage rating of the NTMS5P02R2G?

    The drain-to-source voltage rating is -20 V.

  2. What is the continuous drain current at 25°C for the NTMS5P02R2G?

    The continuous drain current at 25°C is -5.4 A.

  3. What is the thermal resistance - junction-to-ambient for the NTMS5P02R2G?

    The thermal resistance - junction-to-ambient is 50 °C/W.

  4. Is the NTMS5P02R2G Pb-free and RoHS compliant?
  5. What is the gate threshold voltage range for the NTMS5P02R2G?

    The gate threshold voltage range is -0.65 to -1.25 V.

  6. What is the input capacitance range for the NTMS5P02R2G?

    The input capacitance range is 1375 to 1900 pF.

  7. What are the typical applications for the NTMS5P02R2G?

    The NTMS5P02R2G is typically used in power management for portable and battery-powered products such as computers, printers, PCMCIA cards, and cellular and cordless telephones.

  8. Is the NTMS5P02R2G suitable for automotive applications?
  9. What is the operating temperature range for the NTMS5P02R2G?

    The operating temperature range is -55°C to 150°C.

  10. What is the package type for the NTMS5P02R2G?

    The NTMS5P02R2G is packaged in a miniature SOIC-8 surface mount package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.95A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):790mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$0.91
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Same Series
NTMS5P02R2G
NTMS5P02R2G
MOSFET P-CH 20V 3.95A 8SOIC
NTMS5P02R2SG
NTMS5P02R2SG
MOSFET P-CH 20V 3.95A 8SOIC

Similar Products

Part Number NTMS5P02R2G NTMS5P02R2SG NTMS5P02R2
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.95A (Ta) 3.95A (Ta) 7.05A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V 33mOhm @ 5.4A, 4.5V 33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.25V @ 250µA 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V 35 nC @ 4.5 V 35 nC @ 4.5 V
Vgs (Max) ±10V ±10V -
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 16 V 1900 pF @ 16 V 1900 pF @ 16 V
FET Feature - - -
Power Dissipation (Max) 790mW (Ta) 790mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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