NVMJS2D5N06CLTWG
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onsemi NVMJS2D5N06CLTWG

Manufacturer No:
NVMJS2D5N06CLTWG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 31A/164A 8LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVMJS2D5N06CLTWG is an automotive-grade N-Channel power MOSFET produced by onsemi. This component is designed for compact and efficient designs, particularly in automotive applications. It features a small footprint in a 5x6mm LFPAK package, which enhances thermal performance and minimizes space usage. The MOSFET is known for its high current handling and low on-resistance, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 60 V
ID (Continuous Drain Current at Ta) 31 A
ID (Continuous Drain Current at Tc) 164 A
RDS(on) (On-Resistance) 0.002 ohm
PD (Power Dissipation at Ta) 3.9 W
PD (Power Dissipation at Tc) 113 W
Operating Temperature Range -55°C to +175°C
Package Type LFPAK (5x6 mm)
Mounting Type Surface Mount

Key Features

  • Compact Design: Small footprint in a 5x6mm LFPAK package, ideal for space-constrained applications.
  • Low RDS(on): Minimizes conduction losses, enhancing overall efficiency.
  • Low QG and Capacitance: Reduces driver losses, improving switching performance.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications.
  • Pb-free and RoHS-compliant: Environmentally friendly and compliant with regulatory standards.
  • Wide Operating Temperature Range: Operates from -55°C to +175°C, ensuring reliability in diverse environments.

Applications

  • Automotive Systems: Suitable for various automotive power management and switching applications, including electric vehicles, hybrid vehicles, and conventional vehicles.
  • Power Management: Ideal for DC-DC converters, motor control, and other power management systems where high efficiency and reliability are crucial.
  • Industrial Power Systems: Can be used in industrial power systems that require high current handling and low on-resistance.

Q & A

  1. What is the drain-source voltage (VDS) of the NVMJS2D5N06CLTWG?

    The drain-source voltage (VDS) of the NVMJS2D5N06CLTWG is 60 V.

  2. What is the continuous drain current at Ta for this MOSFET?

    The continuous drain current at Ta is 31 A.

  3. What is the on-resistance (RDS(on)) of this MOSFET?

    The on-resistance (RDS(on)) is 0.002 ohm.

  4. What is the operating temperature range of the NVMJS2D5N06CLTWG?

    The operating temperature range is from -55°C to +175°C.

  5. Is the NVMJS2D5N06CLTWG Pb-free and RoHS-compliant?
  6. What package type does the NVMJS2D5N06CLTWG come in?

    The NVMJS2D5N06CLTWG comes in a 5x6mm LFPAK package.

  7. What are some typical applications for the NVMJS2D5N06CLTWG?

    Typical applications include automotive systems, power management systems, and industrial power systems.

  8. What is the power dissipation at Ta and Tc for this MOSFET?

    The power dissipation at Ta is 3.9 W and at Tc is 113 W.

  9. How does the low RDS(on) benefit the performance of the NVMJS2D5N06CLTWG?

    The low RDS(on) minimizes conduction losses, enhancing overall efficiency and performance.

  10. What are the benefits of the low QG and capacitance in this MOSFET?

    The low QG and capacitance reduce driver losses, improving switching performance and efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 164A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 113W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-LFPAK
Package / Case:SOT-1205, 8-LFPAK56
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