Overview
The NVMFS5C468NT1G is a power, single N-Channel MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. With a drain-to-source voltage (VDSS) of 40 V and a continuous drain current (ID) of up to 35 A, it is suitable for a variety of power management and switching applications. The MOSFET features a small footprint of 5x6 mm, making it ideal for compact design requirements.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 35 | A |
| Continuous Drain Current (TA = 25°C) | ID | 12 | A |
| Power Dissipation (TC = 25°C) | PD | 28 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 151 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
| Gate Threshold Voltage | VGS(TH) | 2.5 - 3.5 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) | RDS(on) | 10 - 12 | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 5.3 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 43 | °C/W |
Key Features
- Small Footprint: The device features a compact 5x6 mm DFN package, ideal for space-constrained designs.
- Low RDS(on): With a low on-resistance of 10-12 mΩ, it minimizes conduction losses.
- Low QG and Capacitance: Low gate charge and capacitance reduce driver losses.
- Wettable Flank Option: Available with wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive quality standards.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Power Management: Suitable for DC-DC converters, power supplies, and other power management systems.
- Automotive Systems: Ideal for automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Control: Used in industrial control systems, motor control, and power switching applications.
- Consumer Electronics: Applicable in various consumer electronics requiring efficient power handling.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C468NT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is up to 35 A.
- What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is between 10-12 mΩ at VGS = 10 V and ID = 10 A.
- Is the NVMFS5C468NT1G AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 5.3 °C/W.
- What is the package type of the NVMFS5C468NT1G?
The device is packaged in a 5x6 mm DFN package.
- Is the NVMFS5C468NT1G Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
- What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is between 2.5-3.5 V.
- What are some common applications of the NVMFS5C468NT1G?
Common applications include power management, automotive systems, industrial control, and consumer electronics.
