Overview
The NVMFS5C468NLT1G is a single N-channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. It features a compact 5x6 mm DFN package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. Additionally, it is Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 37 | A |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 20 A) | RDS(on) | 8.6 - 10.3 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Junction-to-Case Thermal Resistance | RθJC | 5.3 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 43 | °C/W |
Key Features
- Small Footprint: Compact 5x6 mm DFN package for space-efficient designs.
- Low RDS(on): Minimizes conduction losses with on-resistance as low as 8.6 mΩ at VGS = 10 V and ID = 20 A.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Wettable Flank Option: Available in a wettable flank version (NVMFS5C468NLWF) for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
The NVMFS5C468NLT1G is suitable for a variety of high-performance applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power supplies: Its low on-resistance and high current handling make it suitable for high-efficiency power supply designs.
- Motor control: Used in motor drive applications requiring high current and low conduction losses.
- Industrial control: Suitable for industrial control systems that demand high reliability and performance.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C468NLT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 37 A.
- What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 20 A?
The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 20 A is 10.3 mΩ.
- Is the NVMFS5C468NLT1G AEC-Q101 qualified?
Yes, the NVMFS5C468NLT1G is AEC-Q101 qualified.
- What is the junction-to-case thermal resistance of the MOSFET?
The junction-to-case thermal resistance (RθJC) is 5.3 °C/W.
- Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What package types are available for the NVMFS5C468NLT1G?
The device is available in DFN5 (SO-8FL) and DFNW5 (SO-8FL WF) packages.
- What is the gate threshold voltage range of the MOSFET?
The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.
- What are the typical switching times for the MOSFET?
The turn-on delay time (td(ON)) is 7 ns, rise time (tr) is 43 ns, turn-off delay time (td(OFF)) is 11 ns, and fall time (tf) is 2 ns.
- What is the forward diode voltage of the MOSFET at 25°C?
The forward diode voltage (VSD) at 25°C is 0.88 to 1.2 V.
