Overview
The NVMFS5C423NLAFT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5 (SO-8FL) package, making it ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 40 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 150 | A |
| Continuous Drain Current (ID) at TC = 100°C | 110 | A |
| Power Dissipation (PD) at TA = 25°C | 3.7 | W |
| Pulsed Drain Current (IDM) at TA = 25°C, tp = 10 μs | 900 | A |
| Operating Junction and Storage Temperature (TJ, Tstg) | −55 to +175 | °C |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 50 A | 1.6 - 2.0 | mΩ |
| Total Gate Charge (QG(TOT)) at VGS = 10 V, VDS = 20 V; ID = 50 A | 50 | nC |
| Turn-On Delay Time (td(ON)) at VGS = 4.5 V, VDS = 20 V; ID = 50 A | 12 | ns |
| Turn-Off Delay Time (td(OFF)) at VGS = 4.5 V, VDS = 20 V; ID = 50 A | 28 | ns |
Key Features
- Compact Design: Small footprint in a DFN5 (SO-8FL) package, ideal for space-constrained applications.
- Low On-Resistance: Minimizes conduction losses with RDS(on) as low as 1.6 mΩ at VGS = 10 V and ID = 50 A.
- Low Gate Charge and Capacitance: Reduces driver losses and improves switching efficiency.
- Wettable Flank Option: Available in a wettable flank version (NVMFS5C423NLWF) for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Aligns with environmental regulations.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Ideal for power management in high-current applications such as DC-DC converters and motor control systems.
- Industrial Control: Used in industrial control systems, including power supplies, inverters, and other high-power switching applications.
- Consumer Electronics: Applicable in consumer electronics requiring high efficiency and compact design, such as power adapters and battery chargers.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFS5C423NLAFT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current (ID) at a case temperature of 25°C?
The continuous drain current (ID) at TC = 25°C is 150 A.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A?
The typical on-resistance (RDS(on)) is 1.6 to 2.0 mΩ at VGS = 10 V and ID = 50 A.
- Is the NVMFS5C423NLAFT1G Pb-free and RoHS compliant?
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175 °C.
- What is the turn-on delay time (td(ON)) at VGS = 4.5 V, VDS = 20 V, and ID = 50 A?
The turn-on delay time (td(ON)) is 12 ns.
- What is the total gate charge (QG(TOT)) at VGS = 10 V, VDS = 20 V, and ID = 50 A?
The total gate charge (QG(TOT)) is 50 nC.
- Is the NVMFS5C423NLAFT1G suitable for automotive applications?
- What package type does the NVMFS5C423NLAFT1G come in?
The device comes in a DFN5 (SO-8FL) package.
- What are the key benefits of the wettable flank version of this MOSFET?
The wettable flank version (NVMFS5C423NLWF) enhances optical inspection capabilities.
