Overview
The NVMFS4C01NT1G is a single N-channel logic-level MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and minimal conduction losses. It features a small footprint in an SO-8FL package, making it ideal for compact designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, aligning with environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | −20 | V |
| Continuous Drain Current (RΣJC) | ID | 370 | A |
| Power Dissipation (RΣJC) | PD | 161 | W |
| Continuous Drain Current (RΣJA) | ID | 57 | A |
| Power Dissipation (RΣJA) | PD | 3.84 | W |
| Pulsed Drain Current | IDM | 900 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to 175 | °C |
| Source Current (Body Diode) | IS | 110 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 862 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RΣJC | 0.93 | °C/W |
| Junction-to-Ambient Thermal Resistance | RΣJA | 39 | °C/W |
| Drain-to-Source On Resistance (VGS = 10 V) | RDS(on) | 0.67 mΩ | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 to 2.2 V | V |
Key Features
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flanks Option (NVMFS4C01NWF) for Enhanced Optical Inspection
- AEC-Q101 Qualified and PPAP Capable
- Pb-free, Halogen Free/BFR Free and RoHS Compliant
Applications
The NVMFS4C01NT1G is suitable for a variety of high-performance applications, including automotive systems, industrial power supplies, DC-DC converters, motor control circuits, and other power management systems where low on-resistance and high reliability are critical.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS4C01NT1G?
The maximum drain-to-source voltage (VDSS) is 30 V. - What is the continuous drain current rating at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 370 A for RΣJC and 57 A for RΣJA. - What is the power dissipation rating at TA = 25°C?
The power dissipation (PD) at TA = 25°C is 3.84 W for RΣJA. - What is the pulsed drain current rating?
The pulsed drain current (IDM) is 900 A for a pulse duration of 10 μs. - What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to 175 °C. - Is the NVMFS4C01NT1G RoHS compliant?
Yes, the NVMFS4C01NT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the typical on-resistance (RDS(on)) at VGS = 10 V?
The typical on-resistance (RDS(on)) at VGS = 10 V is 0.67 mΩ. - What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.3 to 2.2 V. - Is the NVMFS4C01NT1G AEC-Q101 qualified?
Yes, the NVMFS4C01NT1G is AEC-Q101 qualified and PPAP capable. - What package type does the NVMFS4C01NT1G come in?
The NVMFS4C01NT1G comes in an SO-8FL package.
