NVMFS4C05NT1G
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onsemi NVMFS4C05NT1G

Manufacturer No:
NVMFS4C05NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 24.7A/116A 5DFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NVMFS4C05NT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed for demanding applications that require low on-state resistance and high current handling capabilities. It features a 30 V drain-to-source voltage rating and can handle continuous drain currents of up to 24.7 A at ambient temperature and 116 A at case temperature. The MOSFET is packaged in a compact SO-8FL (5x6 mm) surface mount package, making it ideal for space-constrained designs.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (Ta = 25°C) ID 24.7 A
Continuous Drain Current (Tc) ID 116 A
Power Dissipation (Ta = 25°C) PD 3.61 W
Power Dissipation (Tc) PD 79 W
On-Resistance (RDS(on)) at VGS = 4.5 V RDS(on) 4 mΩ
On-Resistance (RDS(on)) at VGS = 10 V RDS(on) 2.8 mΩ
Gate Threshold Voltage VGS(th) 2.2 V
Total Gate Charge at VGS = 10 V Qg 30 nC nC

Key Features

  • Low on-resistance (RDS(on)) to minimize conduction losses.
  • Low gate charge (Qg) and capacitance to minimize driver losses.
  • Compact SO-8FL (5x6 mm) surface mount package for space-constrained designs.
  • Pb-free, halogen-free, and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive applications.

Applications

  • CPU power delivery systems.
  • DC-DC converters.
  • Automotive systems requiring high reliability and performance.
  • High-power switching applications.

Q & A

  1. What is the maximum drain-to-source voltage rating of the NVMFS4C05NT1G?

    The maximum drain-to-source voltage rating is 30 V.

  2. What is the continuous drain current at ambient temperature (Ta = 25°C)?

    The continuous drain current at ambient temperature is 24.7 A.

  3. What is the on-resistance (RDS(on)) at VGS = 10 V?

    The on-resistance (RDS(on)) at VGS = 10 V is 2.8 mΩ.

  4. Is the NVMFS4C05NT1G Pb-free and RoHS compliant?
  5. What is the typical total gate charge at VGS = 10 V?

    The typical total gate charge at VGS = 10 V is 30 nC.

  6. What are the common applications of the NVMFS4C05NT1G?
  7. What is the package type of the NVMFS4C05NT1G?

    The package type is SO-8FL (5x6 mm) surface mount.

  8. Is the NVMFS4C05NT1G AEC-Q101 qualified?
  9. What is the maximum power dissipation at case temperature (Tc)?

    The maximum power dissipation at case temperature is 79 W.

  10. What is the gate threshold voltage of the NVMFS4C05NT1G?

    The gate threshold voltage is up to 2.2 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:24.7A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1972 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.61W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

$1.93
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MOSFET N-CH 30V 24.7A/116A 5DFN
NVMFS4C05NWFT3G
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Similar Products

Part Number NVMFS4C05NT1G NVMFS4C05NT3G NVMFS4C01NT1G NVMFS4C03NT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 24.7A (Ta), 116A (Tc) 24.7A (Ta), 116A (Tc) 49A (Ta), 319A (Tc) 31.4A (Ta), 143A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V 3.4mOhm @ 30A, 10V 0.9mOhm @ 30A, 10V 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 30 nC @ 10 V 139 nC @ 10 V 45.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1972 pF @ 15 V 1972 pF @ 15 V 10144 pF @ 15 V 3071 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 3.61W (Ta), 79W (Tc) 3.61W (Ta), 79W (Tc) 3.84W (Ta), 161W (Tc) 3.71W (Ta), 77W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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