Overview
The NVMFS4C05NT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed for demanding applications that require low on-state resistance and high current handling capabilities. It features a 30 V drain-to-source voltage rating and can handle continuous drain currents of up to 24.7 A at ambient temperature and 116 A at case temperature. The MOSFET is packaged in a compact SO-8FL (5x6 mm) surface mount package, making it ideal for space-constrained designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Ta = 25°C) | ID | 24.7 | A |
| Continuous Drain Current (Tc) | ID | 116 | A |
| Power Dissipation (Ta = 25°C) | PD | 3.61 | W |
| Power Dissipation (Tc) | PD | 79 | W |
| On-Resistance (RDS(on)) at VGS = 4.5 V | RDS(on) | 4 mΩ | mΩ |
| On-Resistance (RDS(on)) at VGS = 10 V | RDS(on) | 2.8 mΩ | mΩ |
| Gate Threshold Voltage | VGS(th) | 2.2 | V |
| Total Gate Charge at VGS = 10 V | Qg | 30 nC | nC |
Key Features
- Low on-resistance (RDS(on)) to minimize conduction losses.
- Low gate charge (Qg) and capacitance to minimize driver losses.
- Compact SO-8FL (5x6 mm) surface mount package for space-constrained designs.
- Pb-free, halogen-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive applications.
Applications
- CPU power delivery systems.
- DC-DC converters.
- Automotive systems requiring high reliability and performance.
- High-power switching applications.
Q & A
- What is the maximum drain-to-source voltage rating of the NVMFS4C05NT1G?
The maximum drain-to-source voltage rating is 30 V.
- What is the continuous drain current at ambient temperature (Ta = 25°C)?
The continuous drain current at ambient temperature is 24.7 A.
- What is the on-resistance (RDS(on)) at VGS = 10 V?
The on-resistance (RDS(on)) at VGS = 10 V is 2.8 mΩ.
- Is the NVMFS4C05NT1G Pb-free and RoHS compliant?
- What is the typical total gate charge at VGS = 10 V?
The typical total gate charge at VGS = 10 V is 30 nC.
- What are the common applications of the NVMFS4C05NT1G?
- What is the package type of the NVMFS4C05NT1G?
The package type is SO-8FL (5x6 mm) surface mount.
- Is the NVMFS4C05NT1G AEC-Q101 qualified?
- What is the maximum power dissipation at case temperature (Tc)?
The maximum power dissipation at case temperature is 79 W.
- What is the gate threshold voltage of the NVMFS4C05NT1G?
The gate threshold voltage is up to 2.2 V.
