Overview
The NVD6824NLT4G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current capability, making it suitable for a variety of power management and switching applications. The MOSFET is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Breakdown Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 41 A |
| Drain-Source On-Resistance (Rds(on)) | 20 mΩ |
| Gate-Source Voltage (Vgs) | ±20 V |
| Avalanche Energy | Specified |
| Pb-Free | Yes |
| AEC-Q101 Qualified | Yes |
Key Features
- Low Rds(on) to minimize conduction losses
- High current capability of up to 41 A
- Avalanche energy specified for robust operation
- AEC-Q101 qualified for automotive and other high-reliability applications
- Pb-Free, compliant with environmental regulations
Applications
The NVD6824NLT4G is suitable for various applications including automotive systems, power supplies, motor control, and other high-power switching applications. Its high current capability and low on-resistance make it an ideal choice for systems requiring efficient power management.
Q & A
- What is the drain-source breakdown voltage of the NVD6824NLT4G?
The drain-source breakdown voltage is 100 V. - What is the continuous drain current rating of this MOSFET?
The continuous drain current rating is 41 A. - What is the typical on-resistance of the NVD6824NLT4G?
The typical on-resistance (Rds(on)) is 20 mΩ. - Is the NVD6824NLT4G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified. - Is the NVD6824NLT4G Pb-Free?
Yes, it is Pb-Free. - What are some common applications for the NVD6824NLT4G?
Common applications include automotive systems, power supplies, and motor control. - What is the significance of avalanche energy being specified for this MOSFET?
The specified avalanche energy indicates the device's ability to withstand high-energy pulses, enhancing its robustness and reliability. - What is the maximum gate-source voltage for the NVD6824NLT4G?
The maximum gate-source voltage is ±20 V. - Why is low Rds(on) important in a MOSFET like the NVD6824NLT4G?
Low Rds(on) minimizes conduction losses, improving the overall efficiency of the system. - Where can I find detailed specifications for the NVD6824NLT4G?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
