NVD5C486NLT4G
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onsemi NVD5C486NLT4G

Manufacturer No:
NVD5C486NLT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 9.8A/24A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVD5C486NLT4G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance (RDS(on)) and minimal driver losses, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a DPAK (TO-252) package, which is lead-free and available in tape and reel format for high-volume production.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
ID (Continuous Drain Current)24 A
RDS(on) (On-Resistance)16 mΩ (typical at VGS = 10 V)
VGS(th) (Threshold Voltage)2.0 - 4.0 V
Qg (Total Gate Charge)17 nC (typical)
PackageDPAK (TO-252), Pb-Free
QualificationAEC-Q101 Qualified and PPAP Capable

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 Qualified and PPAP Capable, ensuring high reliability for automotive applications
  • Lead-free DPAK (TO-252) package for environmental compliance

Applications

The NVD5C486NLT4G is suitable for various power management and switching applications, including but not limited to:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power systems, such as battery management, motor control, and power steering.
  • Industrial power supplies: Its low on-resistance and minimal driver losses make it a good choice for high-efficiency power supplies.
  • DC-DC converters: The MOSFET’s low QG and capacitance make it suitable for high-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NVD5C486NLT4G?
    The maximum drain-source voltage (VDS) is 40 V.
  2. What is the typical on-resistance (RDS(on)) of the NVD5C486NLT4G?
    The typical on-resistance (RDS(on)) is 16 mΩ at VGS = 10 V.
  3. What is the continuous drain current (ID) rating of the NVD5C486NLT4G?
    The continuous drain current (ID) rating is 24 A.
  4. What package type is the NVD5C486NLT4G available in?
    The NVD5C486NLT4G is available in a DPAK (TO-252) package, which is lead-free.
  5. Is the NVD5C486NLT4G qualified for automotive applications?
    Yes, the NVD5C486NLT4G is AEC-Q101 Qualified and PPAP Capable.
  6. What are the key features of the NVD5C486NLT4G?
    The key features include low RDS(on), low QG and capacitance, and AEC-Q101 qualification.
  7. What are some common applications of the NVD5C486NLT4G?
    Common applications include automotive systems, industrial power supplies, and DC-DC converters.
  8. What is the total gate charge (Qg) of the NVD5C486NLT4G?
    The total gate charge (Qg) is typically 17 nC.
  9. Is the NVD5C486NLT4G available in tape and reel format?
    Yes, the NVD5C486NLT4G is available in tape and reel format for high-volume production.
  10. What is the threshold voltage (VGS(th)) range of the NVD5C486NLT4G?
    The threshold voltage (VGS(th)) range is 2.0 - 4.0 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:9.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.9W (Ta), 18W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NVD5C486NLT4G NVD5C486NT4G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta), 24A (Tc) 9.2A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V 17.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20µA 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V 380 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.9W (Ta), 18W (Tc) 2.9W (Ta), 18.3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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