Overview
The NVD5117PLT4G is a power MOSFET from onsemi, designed for high-performance applications. This P-Channel MOSFET features a drain-to-source voltage (VDSS) of -60 V and a continuous drain current (ID) of up to -61 A at 25°C. It is packaged in a DPAK (TO-252) case, which is Pb-free, halogen-free, and RoHS compliant. The device is AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | -61 | A |
| Continuous Drain Current (TC = 100°C) | ID | -43 | A |
| Power Dissipation (TC = 25°C) | PD | 118 | W |
| Power Dissipation (TC = 100°C) | PD | 59 | W |
| Drain-to-Source On Resistance (VGS = -10 V, ID = -29 A) | RDS(on) | 12 - 16 | mΩ |
| Gate Threshold Voltage | VGS(TH) | -1.5 to -2.5 | V |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 240 | mJ |
Key Features
- Low RDS(on) to minimize conduction losses
- High current capability of up to -61 A
- Avalanche energy specified for robust operation
- AEC-Q101 qualified for automotive applications
- Pb-free, halogen-free, and RoHS compliant
- High thermal performance with junction-to-case thermal resistance of 1.3 °C/W
Applications
The NVD5117PLT4G MOSFET is suitable for a variety of high-power applications, including:
- Automotive systems, such as power steering, fuel pumps, and electric vehicle charging
- Industrial power supplies and motor control systems
- Power management in consumer electronics and appliances
- Switch-mode power supplies and DC-DC converters
Q & A
- What is the maximum drain-to-source voltage of the NVD5117PLT4G?
The maximum drain-to-source voltage (VDSS) is -60 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is up to -61 A at 25°C.
- Is the NVD5117PLT4G AEC-Q101 qualified?
Yes, the NVD5117PLT4G is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the typical on-resistance of the NVD5117PLT4G?
The typical on-resistance (RDS(on)) is 12-16 mΩ at VGS = -10 V and ID = -29 A.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 175 °C.
- Is the NVD5117PLT4G Pb-free and RoHS compliant?
Yes, the NVD5117PLT4G is Pb-free, halogen-free, and RoHS compliant.
- What is the single pulse drain-to-source avalanche energy rating?
The single pulse drain-to-source avalanche energy (EAS) is 240 mJ.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 1.3 °C/W.
- What package type is the NVD5117PLT4G available in?
The NVD5117PLT4G is available in a DPAK (TO-252) package.
- What are some common applications for the NVD5117PLT4G?
Common applications include automotive systems, industrial power supplies, motor control systems, and switch-mode power supplies.
