onsemi NVBG040N120SC1

Manufacturer No:: NVBG040N120SC1
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: TRANS SJT N-CH 1200V 60A D2PAK-7
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Product Introduction

Overview

The NVBG040N120SC1 is a Silicon Carbide (SiC) MOSFET produced by onsemi, leveraging the EliteSiC technology. This N-Channel MOSFET is designed to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. It features a low ON resistance and a compact chip size, resulting in low capacitance and gate charge. This enhances system efficiency, allows for faster operation frequencies, increases power density, reduces electromagnetic interference (EMI), and minimizes system size.

Key Specifications

Parameter	Value
Channel Mode	Enhancement
Type of Transistor	N-Channel MOSFET
Blocking Voltage (BV_DSS)	1200 V
Maximum Drain Current (I_D(max))	60 A
On Resistance (R_DS(on)) at V_gs = 20V, I_d = 60A	40 mΩ (Typical), 28 mΩ (Maximum at V_gs = 20V, I_d = 60A)
Gate Charge (Q_g)	220 nC
Output Capacitance	258 pF
Minimum Operating Temperature	-55°C
Maximum Operating Temperature	+175°C
Power Dissipation (P_d)	357 W
Package Type	D2PAK-7L

Key Features

High-speed switching and low capacitance.
Low ON resistance (40 mΩ typical) and compact chip size.
100% UIL tested for reliability.
Devices are RoHS compliant.
Qualified for automotive applications according to AEC-Q101 standards.

Applications

High power DC-DC converters.
Inverters.
Automotive DC/DC converters for Electric Vehicles (EV) and Plug-in Hybrid Electric Vehicles (PHEV).
Automotive inverters.

Q & A

What is the blocking voltage of the NVBG040N120SC1 MOSFET?
The blocking voltage (BV_DSS) of the NVBG040N120SC1 MOSFET is 1200 V.
What is the maximum drain current of the NVBG040N120SC1?
The maximum drain current (I_D(max)) of the NVBG040N120SC1 is 60 A.
What is the typical on resistance of the NVBG040N120SC1?
The typical on resistance (R_DS(on)) of the NVBG040N120SC1 is 40 mΩ at V_gs = 20V, I_d = 60A.
What is the package type of the NVBG040N120SC1?
The NVBG040N120SC1 comes in a D2PAK-7L package.
Is the NVBG040N120SC1 qualified for automotive applications?
What are the operating temperature ranges for the NVBG040N120SC1?
What is the power dissipation (P_d) of the NVBG040N120SC1? d) of the NVBG040N120SC1 is 357 W.
Are the NVBG040N120SC1 devices RoHS compliant?
What are some common applications of the NVBG040N120SC1?
What are the benefits of using SiC technology in the NVBG040N120SC1?

In Stock

UnitPrice: $25.36

Quantity: 12

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Part Number	NVBG040N120SC1	NVBG080N120SC1	NVBG020N120SC1
Manufacturer	onsemi	onsemi	onsemi
Product Status	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel
Technology	SiCFET (Silicon Carbide)	SiCFET (Silicon Carbide)	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V	1200 V	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)	30A (Tc)	8.6A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V	20V	20V
Rds On (Max) @ Id, Vgs	56mOhm @ 35A, 20V	110mOhm @ 20A, 20V	28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id	4.3V @ 10mA	4.3V @ 5mA	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 20 V	56 nC @ 20 V	220 nC @ 20 V
Vgs (Max)	+25V, -15V	+25V, -15V	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	1789 pF @ 800 V	1154 pF @ 800 V	2943 pF @ 800 V
FET Feature	-	-	-
Power Dissipation (Max)	357W (Tc)	179W (Tc)	3.7W (Ta), 468W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D2PAK-7	D2PAK-7	D2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id:	4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:	106 nC @ 20 V
Vgs (Max):	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	1789 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	357W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

onsemi NVBG040N120SC1

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

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