English
NVBG040N120SC1
  • Share:

onsemi NVBG040N120SC1

Manufacturer No:
NVBG040N120SC1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS SJT N-CH 1200V 60A D2PAK-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVBG040N120SC1 is a Silicon Carbide (SiC) MOSFET produced by onsemi, leveraging the EliteSiC technology. This N-Channel MOSFET is designed to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. It features a low ON resistance and a compact chip size, resulting in low capacitance and gate charge. This enhances system efficiency, allows for faster operation frequencies, increases power density, reduces electromagnetic interference (EMI), and minimizes system size.

Key Specifications

Parameter Value
Channel Mode Enhancement
Type of Transistor N-Channel MOSFET
Blocking Voltage (BVDSS) 1200 V
Maximum Drain Current (ID(max)) 60 A
On Resistance (RDS(on)) at Vgs = 20V, Id = 60A 40 mΩ (Typical), 28 mΩ (Maximum at Vgs = 20V, Id = 60A)
Gate Charge (Qg) 220 nC
Output Capacitance 258 pF
Minimum Operating Temperature -55°C
Maximum Operating Temperature +175°C
Power Dissipation (Pd) 357 W
Package Type D2PAK-7L

Key Features

  • High-speed switching and low capacitance.
  • Low ON resistance (40 mΩ typical) and compact chip size.
  • 100% UIL tested for reliability.
  • Devices are RoHS compliant.
  • Qualified for automotive applications according to AEC-Q101 standards.

Applications

  • High power DC-DC converters.
  • Inverters.
  • Automotive DC/DC converters for Electric Vehicles (EV) and Plug-in Hybrid Electric Vehicles (PHEV).
  • Automotive inverters.

Q & A

  1. What is the blocking voltage of the NVBG040N120SC1 MOSFET?

    The blocking voltage (BVDSS) of the NVBG040N120SC1 MOSFET is 1200 V.

  2. What is the maximum drain current of the NVBG040N120SC1?

    The maximum drain current (ID(max)) of the NVBG040N120SC1 is 60 A.

  3. What is the typical on resistance of the NVBG040N120SC1?

    The typical on resistance (RDS(on)) of the NVBG040N120SC1 is 40 mΩ at Vgs = 20V, Id = 60A.

  4. What is the package type of the NVBG040N120SC1?

    The NVBG040N120SC1 comes in a D2PAK-7L package.

  5. Is the NVBG040N120SC1 qualified for automotive applications?
  6. What are the operating temperature ranges for the NVBG040N120SC1?
  7. What is the power dissipation (Pd) of the NVBG040N120SC1? d) of the NVBG040N120SC1 is 357 W.

  8. Are the NVBG040N120SC1 devices RoHS compliant?
  9. What are some common applications of the NVBG040N120SC1?
  10. What are the benefits of using SiC technology in the NVBG040N120SC1?

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id:4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1789 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
0 Remaining View Similar

In Stock

$25.36
12

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NVBG040N120SC1 NVBG080N120SC1 NVBG020N120SC1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 30A (Tc) 8.6A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V 110mOhm @ 20A, 20V 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA 4.3V @ 5mA 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V 56 nC @ 20 V 220 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1789 pF @ 800 V 1154 pF @ 800 V 2943 pF @ 800 V
FET Feature - - -
Power Dissipation (Max) 357W (Tc) 179W (Tc) 3.7W (Ta), 468W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK-7 D2PAK-7 D2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE