Overview
The NVBG040N120SC1 is a Silicon Carbide (SiC) MOSFET produced by onsemi, leveraging the EliteSiC technology. This N-Channel MOSFET is designed to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. It features a low ON resistance and a compact chip size, resulting in low capacitance and gate charge. This enhances system efficiency, allows for faster operation frequencies, increases power density, reduces electromagnetic interference (EMI), and minimizes system size.
Key Specifications
Parameter | Value |
---|---|
Channel Mode | Enhancement |
Type of Transistor | N-Channel MOSFET |
Blocking Voltage (BVDSS) | 1200 V |
Maximum Drain Current (ID(max)) | 60 A |
On Resistance (RDS(on)) at Vgs = 20V, Id = 60A | 40 mΩ (Typical), 28 mΩ (Maximum at Vgs = 20V, Id = 60A) |
Gate Charge (Qg) | 220 nC |
Output Capacitance | 258 pF |
Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | +175°C |
Power Dissipation (Pd) | 357 W |
Package Type | D2PAK-7L |
Key Features
- High-speed switching and low capacitance.
- Low ON resistance (40 mΩ typical) and compact chip size.
- 100% UIL tested for reliability.
- Devices are RoHS compliant.
- Qualified for automotive applications according to AEC-Q101 standards.
Applications
- High power DC-DC converters.
- Inverters.
- Automotive DC/DC converters for Electric Vehicles (EV) and Plug-in Hybrid Electric Vehicles (PHEV).
- Automotive inverters.
Q & A
- What is the blocking voltage of the NVBG040N120SC1 MOSFET?
The blocking voltage (BVDSS) of the NVBG040N120SC1 MOSFET is 1200 V.
- What is the maximum drain current of the NVBG040N120SC1?
The maximum drain current (ID(max)) of the NVBG040N120SC1 is 60 A.
- What is the typical on resistance of the NVBG040N120SC1?
The typical on resistance (RDS(on)) of the NVBG040N120SC1 is 40 mΩ at Vgs = 20V, Id = 60A.
- What is the package type of the NVBG040N120SC1?
The NVBG040N120SC1 comes in a D2PAK-7L package.
- Is the NVBG040N120SC1 qualified for automotive applications?
- What are the operating temperature ranges for the NVBG040N120SC1?
- What is the power dissipation (Pd) of the NVBG040N120SC1?
d) of the NVBG040N120SC1 is 357 W. - Are the NVBG040N120SC1 devices RoHS compliant?
- What are some common applications of the NVBG040N120SC1?
- What are the benefits of using SiC technology in the NVBG040N120SC1?