English
NVBG040N120SC1
  • Share:

onsemi NVBG040N120SC1

Manufacturer No:
NVBG040N120SC1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS SJT N-CH 1200V 60A D2PAK-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVBG040N120SC1 is a Silicon Carbide (SiC) MOSFET produced by onsemi, leveraging the EliteSiC technology. This N-Channel MOSFET is designed to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. It features a low ON resistance and a compact chip size, resulting in low capacitance and gate charge. This enhances system efficiency, allows for faster operation frequencies, increases power density, reduces electromagnetic interference (EMI), and minimizes system size.

Key Specifications

Parameter Value
Channel Mode Enhancement
Type of Transistor N-Channel MOSFET
Blocking Voltage (BVDSS) 1200 V
Maximum Drain Current (ID(max)) 60 A
On Resistance (RDS(on)) at Vgs = 20V, Id = 60A 40 mΩ (Typical), 28 mΩ (Maximum at Vgs = 20V, Id = 60A)
Gate Charge (Qg) 220 nC
Output Capacitance 258 pF
Minimum Operating Temperature -55°C
Maximum Operating Temperature +175°C
Power Dissipation (Pd) 357 W
Package Type D2PAK-7L

Key Features

  • High-speed switching and low capacitance.
  • Low ON resistance (40 mΩ typical) and compact chip size.
  • 100% UIL tested for reliability.
  • Devices are RoHS compliant.
  • Qualified for automotive applications according to AEC-Q101 standards.

Applications

  • High power DC-DC converters.
  • Inverters.
  • Automotive DC/DC converters for Electric Vehicles (EV) and Plug-in Hybrid Electric Vehicles (PHEV).
  • Automotive inverters.

Q & A

  1. What is the blocking voltage of the NVBG040N120SC1 MOSFET?

    The blocking voltage (BVDSS) of the NVBG040N120SC1 MOSFET is 1200 V.

  2. What is the maximum drain current of the NVBG040N120SC1?

    The maximum drain current (ID(max)) of the NVBG040N120SC1 is 60 A.

  3. What is the typical on resistance of the NVBG040N120SC1?

    The typical on resistance (RDS(on)) of the NVBG040N120SC1 is 40 mΩ at Vgs = 20V, Id = 60A.

  4. What is the package type of the NVBG040N120SC1?

    The NVBG040N120SC1 comes in a D2PAK-7L package.

  5. Is the NVBG040N120SC1 qualified for automotive applications?
  6. What are the operating temperature ranges for the NVBG040N120SC1?
  7. What is the power dissipation (Pd) of the NVBG040N120SC1? d) of the NVBG040N120SC1 is 357 W.

  8. Are the NVBG040N120SC1 devices RoHS compliant?
  9. What are some common applications of the NVBG040N120SC1?
  10. What are the benefits of using SiC technology in the NVBG040N120SC1?

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id:4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1789 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
0 Remaining View Similar

In Stock

$25.36
12

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NVBG040N120SC1 NVBG080N120SC1 NVBG020N120SC1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 30A (Tc) 8.6A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V 110mOhm @ 20A, 20V 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA 4.3V @ 5mA 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V 56 nC @ 20 V 220 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1789 pF @ 800 V 1154 pF @ 800 V 2943 pF @ 800 V
FET Feature - - -
Power Dissipation (Max) 357W (Tc) 179W (Tc) 3.7W (Ta), 468W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK-7 D2PAK-7 D2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-8, D²Pak (7 Leads + Tab), TO-263CA TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Related Product By Categories

STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3