Overview
The NVB110N65S3F is a high-voltage, single N-Channel power MOSFET from ON Semiconductor, part of their SUPERFET III family. This MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it highly suitable for various power systems requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Polarity | N-Channel |
| VDS (Max) | 650 V |
| ID (Max) | 30 A |
| RDS(on) (Max @ VGS = 10 V) | 110 mΩ |
| VGS (Max) | ±30 V |
| Vgs(th) (Max) | 5 V |
| PD (Max) | 240 W |
| Package Type | D2PAK-3 / TO-263-2 |
| Compliance | RoHS Compliant, AEC-Q101 Qualified and PPAP Capable |
Key Features
- Low RDS(on) for reduced conduction loss
- Low QG and capacitance for improved switching performance
- Optimized reverse recovery performance of the body diode to remove additional components and improve system reliability
- AEC-Q101 Qualified and PPAP Capable for automotive applications
- RoHS Compliant for environmental sustainability
Applications
- High Voltage DC/DC converters
- On-Board Chargers (OBC)
- Other high-efficiency power systems requiring miniaturization
Q & A
- What is the maximum drain-to-source voltage (VDS) of the NVB110N65S3F MOSFET?
The maximum drain-to-source voltage (VDS) is 650 V.
- What is the maximum drain current (ID) of the NVB110N65S3F MOSFET?
The maximum drain current (ID) is 30 A.
- What is the on-resistance (RDS(on)) of the NVB110N65S3F MOSFET at VGS = 10 V?
The on-resistance (RDS(on)) at VGS = 10 V is 110 mΩ.
- What is the package type of the NVB110N65S3F MOSFET?
The package type is D2PAK-3 / TO-263-2.
- Is the NVB110N65S3F MOSFET RoHS compliant?
Yes, the NVB110N65S3F MOSFET is RoHS compliant.
- What are some typical applications of the NVB110N65S3F MOSFET?
Typical applications include high voltage DC/DC converters and on-board chargers (OBC).
- Does the NVB110N65S3F MOSFET meet automotive standards?
Yes, it is AEC-Q101 Qualified and PPAP Capable.
- What is the maximum power dissipation (PD) of the NVB110N65S3F MOSFET?
The maximum power dissipation (PD) is 240 W.
- How does the NVB110N65S3F MOSFET improve system reliability?
The optimized reverse recovery performance of the body diode helps remove additional components and improve system reliability.
- What technology does the NVB110N65S3F MOSFET use to achieve low on-resistance?
The NVB110N65S3F MOSFET uses charge balance technology to achieve low on-resistance.
