NTP2955G
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onsemi NTP2955G

Manufacturer No:
NTP2955G
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET P-CH 60V 2.4A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The NTF2955G is a power MOSFET from onsemi, designed for high-performance applications. This P-Channel MOSFET is packaged in the SOT-223 case and is known for its low RDS(on) and robust avalanche and commutation capabilities. It is AEC-Q101 qualified for automotive applications and is Pb-free and RoHS compliant.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-60V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID-2.6A
Continuous Drain Current (TA = 85°C)ID-2.0A
Power Dissipation (TA = 25°C)PD2.3W
Pulsed Drain CurrentIDM-17A
Operating Junction and Storage TemperatureTJ, TSTG-55 to 175°C
Single Pulse Drain-to-Source Avalanche EnergyEAS225mJ
Junction-to-Tab Thermal ResistanceRθJC14°C/W
Junction-to-Ambient Thermal ResistanceRθJA65 (Note 1), 150 (Note 2)°C/W

Key Features

- **Low RDS(on):** The NTF2955G features a low drain-to-source on-resistance, typically 145 mΩ at VGS = -10 V and ID = -0.75 A, making it suitable for high-efficiency applications.
- **Avalanche and Commutation Capability:** The device withstands high energy in avalanche and commutation modes, enhancing its reliability in demanding applications.
- **AEC-Q101 Qualified:** The NVF2955 version is qualified to the AEC-Q101 standard, ensuring its suitability for automotive applications.
- **Pb-Free and RoHS Compliant:** The device is lead-free and complies with RoHS regulations, making it environmentally friendly.
- **High Temperature Range:** Operates over a wide temperature range from -55°C to 175°C.

Applications

- **Power Supplies:** Ideal for use in power supply circuits due to its high efficiency and robust thermal performance.
- **PWM Motor Control:** Suitable for pulse-width modulation (PWM) motor control applications where high switching frequencies and low losses are required.
- **Converters:** Used in various converter applications such as DC-DC converters and AC-DC converters.
- **Power Management:** Effective in power management systems that require high reliability and efficiency.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTF2955G?

    The maximum drain-to-source voltage (VDSS) is -60 V.

  2. What is the continuous drain current (ID) at 25°C and 85°C?

    The continuous drain current (ID) is -2.6 A at 25°C and -2.0 A at 85°C.

  3. What is the typical on-resistance (RDS(on)) of the NTF2955G?

    The typical on-resistance (RDS(on)) is 145 mΩ at VGS = -10 V and ID = -0.75 A.

  4. Is the NTF2955G Pb-free and RoHS compliant?
  5. What are the typical applications of the NTF2955G?

    The NTF2955G is typically used in power supplies, PWM motor control, converters, and power management systems.

  6. What is the junction-to-ambient thermal resistance (RθJA) of the NTF2955G?

    The junction-to-ambient thermal resistance (RθJA) is 65 °C/W (Note 1) and 150 °C/W (Note 2), depending on the mounting conditions.

  7. What is the single pulse drain-to-source avalanche energy (EAS) of the NTF2955G?

    The single pulse drain-to-source avalanche energy (EAS) is 225 mJ.

  8. What is the operating junction and storage temperature range of the NTF2955G?

    The operating junction and storage temperature range is -55°C to 175°C.

  9. Is the NVF2955 version of this MOSFET AEC-Q101 qualified?
  10. What is the typical gate threshold voltage (VGS(TH)) of the NTF2955G?

    The typical gate threshold voltage (VGS(TH)) is between -2.0 V and -4.0 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:196mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta), 62.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
NTP2955
NTP2955
MOSFET P-CH 60V 2.4A TO220AB

Similar Products

Part Number NTP2955G NTP2955
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 196mOhm @ 12A, 10V 196mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V 700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.4W (Ta), 62.5W (Tc) 2.4W (Ta), 62.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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