NTP125N65S3H
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onsemi NTP125N65S3H

Manufacturer No:
NTP125N65S3H
Manufacturer:
onsemi
Package:
Tube
Description:
POWER MOSFET, N-CHANNEL, SUPERFE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTP125N65S3H is a high-voltage N-Channel MOSFET produced by onsemi. It belongs to the SUPERFET III family, known for its fast switching capabilities and high reliability. This MOSFET is designed for applications requiring high power handling and efficiency. With its robust TO-220 package, it is suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
ID (Continuous Drain Current)24 A
RDS(ON) (On-Resistance)125 mΩ
PD (Power Dissipation)250 W
TJ (Junction Temperature)-55°C to 150°C
PackageTO-220
Pins3

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Continuous drain current of 24 A, ensuring high current handling capability.
  • Low on-resistance of 125 mΩ, which minimizes power losses and enhances efficiency.
  • Fast switching times, contributing to reduced switching losses and improved overall performance.
  • Robust TO-220 package, providing good thermal dissipation and mechanical stability.

Applications

The NTP125N65S3H is versatile and can be used in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial power management systems.
  • Aerospace and automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the NTP125N65S3H?
    The maximum drain-source voltage is 650 V.
  2. What is the continuous drain current rating of the NTP125N65S3H?
    The continuous drain current rating is 24 A.
  3. What is the on-resistance of the NTP125N65S3H?
    The on-resistance is 125 mΩ.
  4. What package type is the NTP125N65S3H available in?
    The NTP125N65S3H is available in a TO-220 package.
  5. What are the typical applications for the NTP125N65S3H?
    Typical applications include power supplies, motor control systems, high-frequency switching circuits, and industrial power management systems.
  6. What is the junction temperature range for the NTP125N65S3H?
    The junction temperature range is -55°C to 150°C.
  7. Is the NTP125N65S3H suitable for high-frequency switching?
    Yes, it is suitable for high-frequency switching due to its fast switching times.
  8. What is the power dissipation rating of the NTP125N65S3H?
    The power dissipation rating is 250 W.
  9. Is the NTP125N65S3H used in automotive systems?
    Yes, it can be used in automotive systems due to its high reliability and performance.
  10. Where can I find detailed specifications for the NTP125N65S3H?
    Detailed specifications can be found on the onsemi official website, DigiKey, and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):171W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number NTP125N65S3H NTP165N65S3H
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V 165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 2.1mA 4V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 400 V 1808 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 171W (Tc) 142W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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