NTMS4802NR2G
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onsemi NTMS4802NR2G

Manufacturer No:
NTMS4802NR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11.1A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS4802NR2G is a power, N-Channel MOSFET produced by onsemi. This device is packaged in an SO-8 (Small Outline 8-pin) package and is lead-free, making it compliant with RoHS standards. It is designed for high-performance applications requiring low on-resistance and high current handling capabilities.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)18 A
RDS(ON) (On-Resistance)Typically 10 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageSO-8 (Pb-Free)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low On-Resistance: Typically 10 mΩ at VGS = 10 V, ensuring minimal power loss.
  • High Current Handling: Capable of handling up to 18 A of continuous drain current.
  • RoHS Compliant: Lead-free packaging makes it suitable for environmentally friendly designs.
  • High Threshold Voltage: Typically 2.5 V, providing a stable switching threshold.
  • Wide Operating Temperature Range: From -55°C to 150°C, making it versatile for various applications.

Applications

The NTMS4802NR2G is suitable for a variety of high-power applications, including:

  • Power Supplies: DC-DC converters, switching power supplies, and power management systems.
  • Motor Control: Motor drives, servo motors, and other high-current motor applications.
  • Automotive Systems: Battery management, power steering, and other automotive power electronics.
  • Industrial Control: High-power industrial control systems, including inverters and power conditioners.

Q & A

  1. What is the maximum drain-source voltage of the NTMS4802NR2G?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the NTMS4802NR2G?
    The continuous drain current (ID) is 18 A.
  3. What is the typical on-resistance of the NTMS4802NR2G?
    The typical on-resistance (RDS(ON)) is 10 mΩ at VGS = 10 V.
  4. Is the NTMS4802NR2G RoHS compliant?
    Yes, the NTMS4802NR2G is RoHS compliant and lead-free.
  5. What is the operating temperature range of the NTMS4802NR2G?
    The operating temperature range is from -55°C to 150°C.
  6. What package type is the NTMS4802NR2G available in?
    The NTMS4802NR2G is available in an SO-8 (Small Outline 8-pin) package.
  7. What are some common applications for the NTMS4802NR2G?
    Common applications include power supplies, motor control, automotive systems, and industrial control systems.
  8. What is the threshold voltage of the NTMS4802NR2G?
    The typical threshold voltage (VGS(th)) is 2.5 V.
  9. How much power can the NTMS4802NR2G dissipate?
    The power dissipation (PD) is dependent on the package and thermal conditions.
  10. Where can I find detailed specifications for the NTMS4802NR2G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):910mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NTMS4802NR2G NTMS4807NR2G NTMS4872NR2G NTMS4800NR2G NTMS4801NR2G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11.1A (Ta) 9.1A (Ta) 6A (Ta), 10.2A (Tc) 4.9A (Ta) 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 18A, 10V 6.1mOhm @ 14.8A, 10V 13.5mOhm @ 10.2A, 10V 20mOhm @ 7.5A, 10V 9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 4.5 V 24 nC @ 4.5 V 15 nC @ 4.5 V 7.7 nC @ 4.5 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V 2900 pF @ 24 V 1700 pF @ 15 V 940 pF @ 25 V 2201 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 910mW (Ta) 860mW (Ta) 820mW (Ta) 750mW (Ta) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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