NTMS4802NR2G
  • Share:

onsemi NTMS4802NR2G

Manufacturer No:
NTMS4802NR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11.1A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS4802NR2G is a power, N-Channel MOSFET produced by onsemi. This device is packaged in an SO-8 (Small Outline 8-pin) package and is lead-free, making it compliant with RoHS standards. It is designed for high-performance applications requiring low on-resistance and high current handling capabilities.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)18 A
RDS(ON) (On-Resistance)Typically 10 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageSO-8 (Pb-Free)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low On-Resistance: Typically 10 mΩ at VGS = 10 V, ensuring minimal power loss.
  • High Current Handling: Capable of handling up to 18 A of continuous drain current.
  • RoHS Compliant: Lead-free packaging makes it suitable for environmentally friendly designs.
  • High Threshold Voltage: Typically 2.5 V, providing a stable switching threshold.
  • Wide Operating Temperature Range: From -55°C to 150°C, making it versatile for various applications.

Applications

The NTMS4802NR2G is suitable for a variety of high-power applications, including:

  • Power Supplies: DC-DC converters, switching power supplies, and power management systems.
  • Motor Control: Motor drives, servo motors, and other high-current motor applications.
  • Automotive Systems: Battery management, power steering, and other automotive power electronics.
  • Industrial Control: High-power industrial control systems, including inverters and power conditioners.

Q & A

  1. What is the maximum drain-source voltage of the NTMS4802NR2G?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the NTMS4802NR2G?
    The continuous drain current (ID) is 18 A.
  3. What is the typical on-resistance of the NTMS4802NR2G?
    The typical on-resistance (RDS(ON)) is 10 mΩ at VGS = 10 V.
  4. Is the NTMS4802NR2G RoHS compliant?
    Yes, the NTMS4802NR2G is RoHS compliant and lead-free.
  5. What is the operating temperature range of the NTMS4802NR2G?
    The operating temperature range is from -55°C to 150°C.
  6. What package type is the NTMS4802NR2G available in?
    The NTMS4802NR2G is available in an SO-8 (Small Outline 8-pin) package.
  7. What are some common applications for the NTMS4802NR2G?
    Common applications include power supplies, motor control, automotive systems, and industrial control systems.
  8. What is the threshold voltage of the NTMS4802NR2G?
    The typical threshold voltage (VGS(th)) is 2.5 V.
  9. How much power can the NTMS4802NR2G dissipate?
    The power dissipation (PD) is dependent on the package and thermal conditions.
  10. Where can I find detailed specifications for the NTMS4802NR2G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):910mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.43
1,617

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTMS4802NR2G NTMS4807NR2G NTMS4872NR2G NTMS4800NR2G NTMS4801NR2G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11.1A (Ta) 9.1A (Ta) 6A (Ta), 10.2A (Tc) 4.9A (Ta) 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 18A, 10V 6.1mOhm @ 14.8A, 10V 13.5mOhm @ 10.2A, 10V 20mOhm @ 7.5A, 10V 9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 250µA 2.5V @ 250µA 3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 4.5 V 24 nC @ 4.5 V 15 nC @ 4.5 V 7.7 nC @ 4.5 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V 2900 pF @ 24 V 1700 pF @ 15 V 940 pF @ 25 V 2201 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 910mW (Ta) 860mW (Ta) 820mW (Ta) 750mW (Ta) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5