Overview
The NTMFS6D1N08HT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5 (5x6 mm) package, making it ideal for space-constrained designs. The MOSFET is RoHS compliant, Pb-free, halogen-free, BFR-free, and beryllium-free, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 80 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 89 | A |
| Continuous Drain Current (TA = 25°C) | ID | 17 | A |
| Power Dissipation (RJA, TA = 25°C) | PD | 3.8 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 468 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 20 A) | RDS(on) | 4.5 - 5.5 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | V |
| Junction-to-Case Thermal Resistance | RθJC | 1.44 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | °C/W |
Key Features
- Compact Design: Small footprint in a DFN5 (5x6 mm) package, ideal for space-constrained applications.
- Low On-Resistance: RDS(on) as low as 4.5 mΩ at VGS = 10 V and ID = 20 A, minimizing conduction losses.
- Low Gate Charge and Capacitance: Minimizes driver losses and enhances switching performance.
- Environmental Compliance: Pb-free, halogen-free, BFR-free, beryllium-free, and RoHS compliant.
- High Current Handling: Continuous drain current up to 89 A and pulsed drain current up to 468 A.
Applications
- Synchronous Rectification: Used in high-efficiency power conversion circuits.
- AC-DC and DC-DC Power Supplies: Suitable for various power supply designs requiring high current and low on-resistance.
- AC-DC Adapters (USB PD): Ideal for high-power USB power delivery applications.
- Load Switch: Can be used as a high-current load switch in various electronic systems.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS6D1N08HT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is 89 A at TC = 25°C and 17 A at TA = 25°C.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 20 A?
The on-resistance (RDS(on)) is between 4.5 mΩ and 5.5 mΩ.
- Is the NTMFS6D1N08HT1G MOSFET RoHS compliant?
- What are the typical applications of the NTMFS6D1N08HT1G MOSFET?
Typical applications include synchronous rectification, AC-DC and DC-DC power supplies, AC-DC adapters (USB PD), and load switches.
- What is the junction-to-case thermal resistance of the MOSFET?
The junction-to-case thermal resistance (RθJC) is 1.44 °C/W.
- What is the maximum operating junction temperature of the MOSFET?
The maximum operating junction temperature (TJ) is 175 °C.
- What is the gate threshold voltage range of the MOSFET?
The gate threshold voltage (VGS(TH)) range is between 2.0 V and 4.0 V.
- What is the pulsed drain current rating of the MOSFET?
The pulsed drain current (IDM) is up to 468 A for a pulse width of 10 μs.
- What package type does the NTMFS6D1N08HT1G MOSFET come in?
The MOSFET comes in a DFN5 (5x6 mm) package.
