NTMFS4C808NAT1G
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onsemi NTMFS4C808NAT1G

Manufacturer No:
NTMFS4C808NAT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRENCH 6 30V NCH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C08N is a single N-Channel power MOSFET produced by onsemi, designed for low to medium voltage applications. This device is housed in a SO-8 FL package and is known for its low on-resistance (RDS(on)), low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses respectively. The MOSFET is RoHS compliant, Pb-free, and halogen-free, making it environmentally friendly.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID16.4A
Continuous Drain Current (TA = 80°C)ID12.3A
On-Resistance (RDS(on)) at VGS = 10 VRDS(on)5.8 mΩ
On-Resistance (RDS(on)) at VGS = 4.5 VRDS(on)8.5 mΩ
Gate Threshold Voltage (VGS(th))VGS(th)2.1V
Junction-to-Case Thermal ResistanceRθJC4.9°C/W
Junction-to-Ambient Thermal Resistance (Steady State)RθJA49.8°C/W

Key Features

  • Low RDS(on): Minimizes conduction losses, ensuring efficient power delivery.
  • Low Capacitance: Reduces driver losses, enhancing overall system performance.
  • Optimized Gate Charge: Minimizes switching losses, contributing to higher efficiency in switching applications.
  • RoHS Compliant: Pb-free, halogen-free, and environmentally friendly.
  • High Current Capability: Supports up to 52 A of continuous drain current.

Applications

The key applications include CPU power delivery and DC-DC converters.

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C08N MOSFET?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the typical on-resistance (RDS(on)) at VGS = 10 V?

    The typical on-resistance (RDS(on)) at VGS = 10 V is 5.8 mΩ.

  3. What are the key applications of the NTMFS4C08N MOSFET?

    The key applications include CPU power delivery and DC-DC converters.

  4. Is the NTMFS4C08N MOSFET RoHS compliant?

    Yes, the NTMFS4C08N MOSFET is RoHS compliant, Pb-free, and halogen-free.

  5. What is the maximum continuous drain current at TA = 25°C?

    The maximum continuous drain current at TA = 25°C is 16.4 A.

  6. What is the junction-to-case thermal resistance?

    The junction-to-case thermal resistance (RθJC) is 4.9 °C/W.

  7. What is the gate threshold voltage (VGS(th))?

    The gate threshold voltage (VGS(th)) is 2.1 V.

  8. Is the NTMFS4C08N MOSFET suitable for high-frequency switching applications?

    Yes, due to its optimized gate charge and low capacitance, it is suitable for high-frequency switching applications.

  9. What is the package type of the NTMFS4C08N MOSFET?

    The package type is SO-8 FL.

  10. Is the NTMFS4C08N MOSFET still in production?

    No, the NTMFS4C08N MOSFET has been discontinued and is not recommended for new designs. Customers should contact onsemi for information on replacement devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):760mW (Ta), 25.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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$0.56
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