Overview
The NTMFS4C08N is a single N-Channel power MOSFET produced by onsemi, designed for low to medium voltage applications. This device is housed in a SO-8 FL package and is known for its low on-resistance (RDS(on)), low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses respectively. The MOSFET is RoHS compliant, Pb-free, and halogen-free, making it environmentally friendly.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 30 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Continuous Drain Current (TA = 25°C) | ID | 16.4 | A |
Continuous Drain Current (TA = 80°C) | ID | 12.3 | A |
On-Resistance (RDS(on)) at VGS = 10 V | RDS(on) | 5.8 mΩ | mΩ |
On-Resistance (RDS(on)) at VGS = 4.5 V | RDS(on) | 8.5 mΩ | mΩ |
Gate Threshold Voltage (VGS(th)) | VGS(th) | 2.1 | V |
Junction-to-Case Thermal Resistance | RθJC | 4.9 | °C/W |
Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 49.8 | °C/W |
Key Features
- Low RDS(on): Minimizes conduction losses, ensuring efficient power delivery.
- Low Capacitance: Reduces driver losses, enhancing overall system performance.
- Optimized Gate Charge: Minimizes switching losses, contributing to higher efficiency in switching applications.
- RoHS Compliant: Pb-free, halogen-free, and environmentally friendly.
- High Current Capability: Supports up to 52 A of continuous drain current.
Applications
The key applications include CPU power delivery and DC-DC converters.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4C08N MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V?
The typical on-resistance (RDS(on)) at VGS = 10 V is 5.8 mΩ.
- What are the key applications of the NTMFS4C08N MOSFET?
The key applications include CPU power delivery and DC-DC converters.
- Is the NTMFS4C08N MOSFET RoHS compliant?
Yes, the NTMFS4C08N MOSFET is RoHS compliant, Pb-free, and halogen-free.
- What is the maximum continuous drain current at TA = 25°C?
The maximum continuous drain current at TA = 25°C is 16.4 A.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 4.9 °C/W.
- What is the gate threshold voltage (VGS(th))?
The gate threshold voltage (VGS(th)) is 2.1 V.
- Is the NTMFS4C08N MOSFET suitable for high-frequency switching applications?
Yes, due to its optimized gate charge and low capacitance, it is suitable for high-frequency switching applications.
- What is the package type of the NTMFS4C08N MOSFET?
The package type is SO-8 FL.
- Is the NTMFS4C08N MOSFET still in production?
No, the NTMFS4C08N MOSFET has been discontinued and is not recommended for new designs. Customers should contact onsemi for information on replacement devices.