NTMFS4899NFT1G
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onsemi NTMFS4899NFT1G

Manufacturer No:
NTMFS4899NFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 10.4A/75A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4899NFT1G is a high-performance power MOSFET manufactured by onsemi. This component is designed to meet the demanding requirements of modern power electronics, offering a combination of high current handling, low on-resistance, and robust thermal performance. The NTMFS4899NFT1G is particularly suited for applications that require efficient power switching and high reliability.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 30 V
ID (Continuous Drain Current) 75 A
RDS(ON) (On-Resistance) Typically 1.5 mΩ at VGS = 10 V, ID = 50 A
VGS(th) (Threshold Voltage) Typically 2.5 V
PD (Power Dissipation) Dependent on package and thermal conditions
Package SO-8 FL (Single N-Channel, SO-8 Footprint)

Key Features

  • High Current Capability: The NTMFS4899NFT1G can handle continuous drain currents up to 75 A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of 1.5 mΩ at VGS = 10 V, this MOSFET minimizes power losses and enhances efficiency.
  • Robust Thermal Performance: The SO-8 FL package provides good thermal dissipation, ensuring reliable operation in demanding environments.
  • High Voltage Rating: The device can withstand drain-source voltages up to 30 V, making it versatile for various power switching applications.
  • Low Threshold Voltage: A typical threshold voltage of 2.5 V ensures easy gate drive and low power consumption.

Applications

  • Power Supplies: Suitable for high-power DC-DC converters, power factor correction circuits, and other power supply applications.
  • Motor Control: Used in motor drive circuits, including those for industrial automation, robotics, and automotive systems.
  • Renewable Energy Systems: Applicable in solar and wind power systems for efficient power conversion and control.
  • Aerospace and Defense: Can be used in various military and aerospace applications requiring high reliability and performance.
  • Industrial Automation: Ideal for use in industrial control systems, power management, and other high-power switching applications.

Q & A

  1. What is the maximum continuous drain current of the NTMFS4899NFT1G?

    The maximum continuous drain current is 75 A.

  2. What is the typical on-resistance of the NTMFS4899NFT1G?

    The typical on-resistance is 1.5 mΩ at VGS = 10 V, ID = 50 A.

  3. What is the package type of the NTMFS4899NFT1G?

    The package type is SO-8 FL (Single N-Channel, SO-8 Footprint).

  4. What is the maximum drain-source voltage rating of the NTMFS4899NFT1G?

    The maximum drain-source voltage rating is 30 V.

  5. What are some common applications of the NTMFS4899NFT1G?

    Common applications include power supplies, motor control, renewable energy systems, aerospace and defense, and industrial automation.

  6. What is the typical threshold voltage of the NTMFS4899NFT1G?

    The typical threshold voltage is 2.5 V.

  7. How does the NTMFS4899NFT1G handle thermal dissipation?

    The SO-8 FL package provides good thermal dissipation, ensuring reliable operation in demanding environments.

  8. Is the NTMFS4899NFT1G suitable for high-power switching applications?

    Yes, it is designed for high-power switching applications due to its high current capability and low on-resistance.

  9. What are the benefits of using the NTMFS4899NFT1G in power supplies?

    The benefits include high efficiency, low power losses, and robust thermal performance, making it ideal for high-power DC-DC converters and power factor correction circuits.

  10. Can the NTMFS4899NFT1G be used in automotive systems?

    Yes, it can be used in automotive systems for motor control and other high-power switching applications due to its reliability and performance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.4A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):920mW (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS4899NFT1G NTMFS4897NFT1G NTMFS4898NFT1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10.4A (Ta), 75A (Tc) 17A (Ta), 171A (Tc) 13.2A (Ta), 117A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V 2mOhm @ 22A, 10V 3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 83.6 nC @ 10 V 49.5 nC @ 10 V
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 12 V 5660 pF @ 15 V 3233 pF @ 12 V
FET Feature - - -
Power Dissipation (Max) 920mW (Ta), 48W (Tc) 950mW (Ta), 96.2W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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