NTMFS3D6N10MCLT1G
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onsemi NTMFS3D6N10MCLT1G

Manufacturer No:
NTMFS3D6N10MCLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 19.5A/131A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS3D6N10MCLT1G is a single N-Channel power MOSFET manufactured by onsemi. This component is designed to offer high performance and efficiency in various power management applications. With its compact footprint and advanced features, it is ideal for use in space-constrained designs while minimizing losses and improving overall system efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
RDS(on) (On-Resistance)3.6 mΩ
ID (Continuous Drain Current)131 A
PackagePower33 (5x6 mm)
QG (Total Gate Charge)Low QG to minimize driver losses
Ciss, Coss, CrssLow capacitance to minimize driver losses

Key Features

  • Compact 5x6 mm Power33 package for space-efficient designs
  • Low RDS(on) of 3.6 mΩ to minimize conduction losses
  • Low QG and capacitance to reduce driver losses
  • High continuous drain current of 131 A
  • 100 V drain-source voltage rating for robust performance

Applications

The NTMFS3D6N10MCLT1G MOSFET is suitable for a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive and industrial power management
  • Server and data center power systems
  • Renewable energy systems

Q & A

  1. What is the drain-source voltage rating of the NTMFS3D6N10MCLT1G MOSFET?
    The drain-source voltage rating is 100 V.
  2. What is the on-resistance (RDS(on)) of this MOSFET?
    The on-resistance is 3.6 mΩ.
  3. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current is 131 A.
  4. What package type does the NTMFS3D6N10MCLT1G come in?
    The MOSFET comes in a Power33 package with a footprint of 5x6 mm.
  5. Why is the low QG and capacitance important?
    Low QG and capacitance help minimize driver losses, improving overall system efficiency.
  6. What are some common applications for this MOSFET?
    Common applications include power supplies, motor control systems, automotive and industrial power management, server and data center power systems, and renewable energy systems.
  7. Who is the manufacturer of the NTMFS3D6N10MCLT1G MOSFET?
    The manufacturer is onsemi.
  8. Where can I find detailed specifications for the NTMFS3D6N10MCLT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  9. What are the benefits of the compact Power33 package?
    The compact package allows for space-efficient designs, making it ideal for applications where board space is limited.
  10. How does the low RDS(on) benefit the system?
    The low RDS(on) minimizes conduction losses, leading to higher efficiency and reduced heat generation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:19.5A (Ta), 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 48A, 10V
Vgs(th) (Max) @ Id:3V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4411 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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