NTMD4184PFR2G
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onsemi NTMD4184PFR2G

Manufacturer No:
NTMD4184PFR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2.3A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMD4184PFR2G is a P-Channel MOSFET with an integrated Schottky diode, manufactured by onsemi. This device is designed to offer high performance and efficiency in various power management applications. It features a low RDS(on) and low VF Schottky diode, which minimize conduction losses. The MOSFET is packaged in a space-saving SOIC-8 (Pb-Free) package, making it ideal for compact designs. The independent pin-out for the MOSFET and Schottky diode allows for design flexibility.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-30V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID-3.3A
Continuous Drain Current (TA = 70°C)ID-2.6A
Power Dissipation (TA = 25°C)PD1.6W
Pulsed Drain Current (tp = 10 μs)IDM-10A
Operating Junction and Storage TemperatureTJ, TSTG-55 to +150°C
Source Current (Body Diode)IS-1.3A
Lead Temperature for SolderingTL260°C
Peak Repetitive Reverse Voltage (Schottky)VRRM20V
Average Rectified Forward Current (Schottky)IF2.2A
Maximum Instantaneous Forward Voltage (Schottky, IF = 1.0 A)VF0.50V
Drain-to-Source On Resistance (VGS = -10 V, ID = -3.0 A)RDS(on)95 mΩ

Key Features

  • FETKY Surface Mount Package saves board space.
  • Independent pin-out for MOSFET and Schottky allowing for design flexibility.
  • Low RDS(on) MOSFET and low VF Schottky to minimize conduction losses.
  • Optimized gate charge to minimize switching losses.
  • Pb-Free device.

Applications

  • Disk Drives
  • DC-DC Converters
  • Printers

Q & A

  1. What is the maximum drain-to-source voltage of the NTMD4184PFR2G? The maximum drain-to-source voltage is -30 V.
  2. What is the continuous drain current at 25°C and 70°C? The continuous drain current is -3.3 A at 25°C and -2.6 A at 70°C.
  3. What is the power dissipation at 25°C? The power dissipation is 1.6 W at 25°C.
  4. What is the pulsed drain current for a pulse width of 10 μs? The pulsed drain current is -10 A for a pulse width of 10 μs.
  5. What is the operating junction and storage temperature range? The operating junction and storage temperature range is -55 to +150 °C.
  6. What is the source current of the body diode? The source current of the body diode is -1.3 A.
  7. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260 °C.
  8. What is the peak repetitive reverse voltage of the Schottky diode? The peak repetitive reverse voltage of the Schottky diode is 20 V.
  9. What is the average rectified forward current of the Schottky diode? The average rectified forward current of the Schottky diode is 2.2 A.
  10. What is the maximum instantaneous forward voltage of the Schottky diode at 1.0 A? The maximum instantaneous forward voltage of the Schottky diode at 1.0 A is 0.50 V.
  11. What is the drain-to-source on resistance at VGS = -10 V and ID = -3.0 A? The drain-to-source on resistance at VGS = -10 V and ID = -3.0 A is 95 mΩ.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:95mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.2 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:360 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$0.87
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