Overview
The NTMD4184PFR2G is a P-Channel MOSFET with an integrated Schottky diode, manufactured by onsemi. This device is designed to offer high performance and efficiency in various power management applications. It features a low RDS(on) and low VF Schottky diode, which minimize conduction losses. The MOSFET is packaged in a space-saving SOIC-8 (Pb-Free) package, making it ideal for compact designs. The independent pin-out for the MOSFET and Schottky diode allows for design flexibility.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | -3.3 | A |
| Continuous Drain Current (TA = 70°C) | ID | -2.6 | A |
| Power Dissipation (TA = 25°C) | PD | 1.6 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | -10 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to +150 | °C |
| Source Current (Body Diode) | IS | -1.3 | A |
| Lead Temperature for Soldering | TL | 260 | °C |
| Peak Repetitive Reverse Voltage (Schottky) | VRRM | 20 | V |
| Average Rectified Forward Current (Schottky) | IF | 2.2 | A |
| Maximum Instantaneous Forward Voltage (Schottky, IF = 1.0 A) | VF | 0.50 | V |
| Drain-to-Source On Resistance (VGS = -10 V, ID = -3.0 A) | RDS(on) | 95 mΩ | mΩ |
Key Features
- FETKY Surface Mount Package saves board space.
- Independent pin-out for MOSFET and Schottky allowing for design flexibility.
- Low RDS(on) MOSFET and low VF Schottky to minimize conduction losses.
- Optimized gate charge to minimize switching losses.
- Pb-Free device.
Applications
- Disk Drives
- DC-DC Converters
- Printers
Q & A
- What is the maximum drain-to-source voltage of the NTMD4184PFR2G? The maximum drain-to-source voltage is -30 V.
- What is the continuous drain current at 25°C and 70°C? The continuous drain current is -3.3 A at 25°C and -2.6 A at 70°C.
- What is the power dissipation at 25°C? The power dissipation is 1.6 W at 25°C.
- What is the pulsed drain current for a pulse width of 10 μs? The pulsed drain current is -10 A for a pulse width of 10 μs.
- What is the operating junction and storage temperature range? The operating junction and storage temperature range is -55 to +150 °C.
- What is the source current of the body diode? The source current of the body diode is -1.3 A.
- What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260 °C.
- What is the peak repetitive reverse voltage of the Schottky diode? The peak repetitive reverse voltage of the Schottky diode is 20 V.
- What is the average rectified forward current of the Schottky diode? The average rectified forward current of the Schottky diode is 2.2 A.
- What is the maximum instantaneous forward voltage of the Schottky diode at 1.0 A? The maximum instantaneous forward voltage of the Schottky diode at 1.0 A is 0.50 V.
- What is the drain-to-source on resistance at VGS = -10 V and ID = -3.0 A? The drain-to-source on resistance at VGS = -10 V and ID = -3.0 A is 95 mΩ.
