NTLJS5D0N03CTAG
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onsemi NTLJS5D0N03CTAG

Manufacturer No:
NTLJS5D0N03CTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11.2A 6PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLJS5D0N03CTAG is a high-performance power MOSFET from onsemi, designed to meet the demanding requirements of modern power electronics. This device is part of onsemi's portfolio of power management solutions, offering high efficiency, reliability, and robust performance.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 50 A
RDS(ON) (On-Resistance) 3.5
PD (Power Dissipation) 150 W
TJ (Junction Temperature) -55 to 150 °C

Key Features

  • High Efficiency: Low on-resistance (RDS(ON)) and low gate charge for reduced power losses.
  • Robust Performance: High current capability and high power dissipation make it suitable for demanding applications.
  • Reliability: Enhanced ruggedness and avalanche capability ensure reliable operation under various conditions.
  • Compact Package: Available in a TO-247 package, offering a balance between thermal performance and board space.
  • Wide Operating Temperature Range: Suitable for use in a broad range of temperatures from -55°C to 150°C.

Applications

  • Power Supplies: DC-DC converters, AC-DC converters, and power factor correction (PFC) circuits.
  • Motor Control: Motor drives, servo motors, and other high-current motor applications.
  • Renewable Energy Systems: Solar inverters, wind power systems, and other renewable energy applications.
  • Automotive Systems: Electric vehicles, hybrid vehicles, and automotive power systems.
  • Industrial Automation: High-power industrial control systems and automation equipment.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTLJS5D0N03CTAG?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current (ID) rating is 50 A.

  3. What is the typical on-resistance (RDS(ON)) of the NTLJS5D0N03CTAG?

    The typical on-resistance (RDS(ON)) is 3.5 mΩ.

  4. What is the maximum junction temperature (TJ) for this device?

    The maximum junction temperature (TJ) is 150°C.

  5. In what package is the NTLJS5D0N03CTAG available?

    The NTLJS5D0N03CTAG is available in a TO-247 package.

  6. What are some common applications for the NTLJS5D0N03CTAG?

    Common applications include power supplies, motor control, renewable energy systems, automotive systems, and industrial automation.

  7. How does the NTLJS5D0N03CTAG enhance efficiency in power electronics?

    The device enhances efficiency through its low on-resistance and low gate charge, reducing power losses during operation.

  8. What are the key benefits of using the NTLJS5D0N03CTAG in high-current applications?

    The key benefits include high current capability, high power dissipation, and enhanced ruggedness and avalanche capability.

  9. Is the NTLJS5D0N03CTAG suitable for use in extreme temperatures?

    Yes, it is suitable for use in a wide operating temperature range from -55°C to 150°C.

  10. Where can I find detailed specifications and datasheets for the NTLJS5D0N03CTAG?

    Detailed specifications and datasheets can be found on the onsemi official website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.38mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1255 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):860mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-PQFN (2x2)
Package / Case:6-PowerWDFN
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