NTHS5441T1G
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onsemi NTHS5441T1G

Manufacturer No:
NTHS5441T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.9A CHIPFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHS5441T1G is a P-Channel Power MOSFET produced by onsemi. This component is part of the ChipFET family, known for its high performance and reliability in various power management applications. The NTHS5441T1G is designed to provide efficient switching and low on-resistance, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
ID (Continuous Drain Current)3.9 A
RDS(on) (On-Resistance)46 mΩ @ -4.5 V
VGS(th) (Gate-Source Threshold Voltage)-1 to -3 V
PD (Maximum Power Dissipation)See datasheet for detailed conditions

Key Features

  • P-Channel MOSFET with ChipFET technology for enhanced performance.
  • Low on-resistance (RDS(on)) of 46 mΩ @ -4.5 V.
  • High continuous drain current (ID) of 3.9 A.
  • Maximum drain-source voltage (VDS) of -20 V.
  • Compact package suitable for space-constrained designs.

Applications

  • Power management in consumer electronics.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial power systems.
  • Audio and video equipment.

Q & A

  1. What is the maximum drain-source voltage of the NTHS5441T1G? The maximum drain-source voltage is -20 V.
  2. What is the continuous drain current rating of the NTHS5441T1G? The continuous drain current is 3.9 A.
  3. What is the on-resistance of the NTHS5441T1G at -4.5 V? The on-resistance is 46 mΩ @ -4.5 V.
  4. What type of MOSFET is the NTHS5441T1G? It is a P-Channel Power MOSFET.
  5. What is the typical application of the NTHS5441T1G? It is commonly used in power management, DC-DC converters, motor control, and automotive systems.
  6. What is the package type of the NTHS5441T1G? It is available in a compact ChipFET package.
  7. What is the gate-source threshold voltage range of the NTHS5441T1G? The gate-source threshold voltage range is -1 to -3 V.
  8. Where can I find detailed specifications for the NTHS5441T1G? Detailed specifications can be found in the datasheet available on onsemi’s official website and distributor sites like Digi-Key and Mouser.
  9. Is the NTHS5441T1G suitable for high-frequency applications? Yes, it is suitable for high-frequency applications due to its low on-resistance and fast switching characteristics.
  10. What are the advantages of using the ChipFET technology in the NTHS5441T1G? ChipFET technology offers enhanced performance, low on-resistance, and high reliability.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ChipFET™
Package / Case:8-SMD, Flat Lead
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In Stock

$1.01
900

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Same Series
NTHS5441PT1G
NTHS5441PT1G
MOSFET P-CH 20V 3.9A CHIPFET

Similar Products

Part Number NTHS5441T1G NTHS5443T1G NTHS5441PT1G NTHS5441T1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta) 3.6A (Ta) 3.9A (Ta) 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V - -
Rds On (Max) @ Id, Vgs 46mOhm @ 3.9A, 4.5V 65mOhm @ 3.6A, 4.5V 46mOhm @ 3.9A, 4.5V 46mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 600mV @ 250µA (Min) 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V 12 nC @ 4.5 V 22 nC @ 4.5 V 22 nC @ 4.5 V
Vgs (Max) ±12V ±12V - -
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 5 V - 710 pF @ 5 V 710 pF @ 5 V
FET Feature - - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package ChipFET™ ChipFET™ ChipFET™ ChipFET™
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead

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