Overview
The NTHL040N65S3HF is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device utilizes charge-balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. This makes it highly suitable for various power systems requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 65 | A |
| Pulsed Drain Current (IDM) | 162.5 | A |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V | 32 - 40 | mΩ |
| Gate Threshold Voltage (VGS(th)) | 3.0 - 5.0 | V |
| Total Gate Charge (Qg(tot)) at VGS = 10 V | 159 | nC |
| Effective Output Capacitance (Coss(eff.)) | 1367 | pF |
| Thermal Resistance, Junction to Case (RθJC) | 0.28 | °C/W |
| Operating and Storage Temperature Range | -55 to +150 | °C |
Key Features
- Ultra Low Gate Charge (Typ. Qg = 159 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 1367 pF)
- Excellent body diode performance (low Qrr, robust body diode)
- Optimized Capacitance
- 100% Avalanche Tested
- Pb-Free and RoHS Compliant
- 700 V @ TJ = 150°C
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- EV Charger
- UPS / Solar Systems
Q & A
- What is the maximum drain to source voltage of the NTHL040N65S3HF MOSFET?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at TC = 25°C is 65 A.
- What is the typical on-resistance of the MOSFET at VGS = 10 V?
The typical static drain to source on resistance (RDS(on)) at VGS = 10 V is 32 mΩ.
- Is the NTHL040N65S3HF MOSFET RoHS compliant?
- What are the operating and storage temperature ranges for this MOSFET?
The operating and storage temperature range is -55 to +150°C.
- What is the thermal resistance from junction to case (RθJC)?
The thermal resistance from junction to case (RθJC) is 0.28 °C/W.
- What are some of the key applications for this MOSFET?
Key applications include Telecom / Server Power Supplies, Industrial Power Supplies, EV Charger, and UPS / Solar Systems.
- Does the NTHL040N65S3HF MOSFET have optimized body diode performance?
- What is the typical gate charge (Qg) at VGS = 10 V?
The typical total gate charge (Qg(tot)) at VGS = 10 V is 159 nC.
- Is the MOSFET 100% avalanche tested?
