Overview
The NTHL033N65S3HF is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed for high-performance applications requiring robust electrical and thermal characteristics. It features a voltage rating of 650 V, a continuous drain current (Id) of 70 A, and an on-resistance (Rds(on)) of 33 mΩ. The MOSFET is housed in a TO-247 package, making it suitable for a variety of power management and switching applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Voltage Rating (Vds) | 650 | V |
Continuous Drain Current (Id) | 70 | A |
On-Resistance (Rds(on)) | 33 | mΩ |
Maximum Drain Current (Idm) | 175 | A |
Power Dissipation (Pd) | 500 | W |
Thermal Resistance, Junction to Case (RθJC) | 0.35 | K/W |
Package | TO-247 |
Key Features
- High voltage rating of 650 V, making it suitable for high-voltage applications.
- Low on-resistance (Rds(on)) of 33 mΩ, reducing power losses and improving efficiency.
- High continuous drain current (Id) of 70 A and maximum drain current (Idm) of 175 A, supporting high-power applications.
- TO-247 package for good thermal performance and ease of mounting.
- Part of the SUPERFET III family, utilizing advanced super-junction technology for enhanced performance.
Applications
The NTHL033N65S3HF MOSFET is ideal for various high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Renewable energy systems such as solar and wind power.
- Industrial power management and control systems.
- Automotive systems requiring high reliability and performance.
Q & A
- What is the voltage rating of the NTHL033N65S3HF MOSFET?
The voltage rating of the NTHL033N65S3HF MOSFET is 650 V. - What is the continuous drain current (Id) of this MOSFET?
The continuous drain current (Id) is 70 A. - What is the on-resistance (Rds(on)) of this device?
The on-resistance (Rds(on)) is 33 mΩ. - What package type is used for the NTHL033N65S3HF?
The NTHL033N65S3HF is housed in a TO-247 package. - What is the maximum power dissipation (Pd) of this MOSFET?
The maximum power dissipation (Pd) is 500 W. - What is the thermal resistance, junction to case (RθJC), of this device?
The thermal resistance, junction to case (RθJC), is 0.35 K/W. - What technology is used in the SUPERFET III family?
The SUPERFET III family utilizes advanced super-junction technology. - What are some typical applications for the NTHL033N65S3HF?
Typical applications include power supplies, motor control systems, renewable energy systems, industrial power management, and automotive systems. - Where can I find detailed specifications for the NTHL033N65S3HF?
Detailed specifications can be found on the onsemi official website, as well as through distributors like Digi-Key and TME. - What is the maximum drain current (Idm) of the NTHL033N65S3HF?
The maximum drain current (Idm) is 175 A.