NTHL033N65S3HF
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onsemi NTHL033N65S3HF

Manufacturer No:
NTHL033N65S3HF
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 70A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHL033N65S3HF is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed for high-performance applications requiring robust electrical and thermal characteristics. It features a voltage rating of 650 V, a continuous drain current (Id) of 70 A, and an on-resistance (Rds(on)) of 33 mΩ. The MOSFET is housed in a TO-247 package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValueUnit
Voltage Rating (Vds)650V
Continuous Drain Current (Id)70A
On-Resistance (Rds(on))33
Maximum Drain Current (Idm)175A
Power Dissipation (Pd)500W
Thermal Resistance, Junction to Case (RθJC)0.35K/W
PackageTO-247

Key Features

  • High voltage rating of 650 V, making it suitable for high-voltage applications.
  • Low on-resistance (Rds(on)) of 33 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current (Id) of 70 A and maximum drain current (Idm) of 175 A, supporting high-power applications.
  • TO-247 package for good thermal performance and ease of mounting.
  • Part of the SUPERFET III family, utilizing advanced super-junction technology for enhanced performance.

Applications

The NTHL033N65S3HF MOSFET is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power management and control systems.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the NTHL033N65S3HF MOSFET?
    The voltage rating of the NTHL033N65S3HF MOSFET is 650 V.
  2. What is the continuous drain current (Id) of this MOSFET?
    The continuous drain current (Id) is 70 A.
  3. What is the on-resistance (Rds(on)) of this device?
    The on-resistance (Rds(on)) is 33 mΩ.
  4. What package type is used for the NTHL033N65S3HF?
    The NTHL033N65S3HF is housed in a TO-247 package.
  5. What is the maximum power dissipation (Pd) of this MOSFET?
    The maximum power dissipation (Pd) is 500 W.
  6. What is the thermal resistance, junction to case (RθJC), of this device?
    The thermal resistance, junction to case (RθJC), is 0.35 K/W.
  7. What technology is used in the SUPERFET III family?
    The SUPERFET III family utilizes advanced super-junction technology.
  8. What are some typical applications for the NTHL033N65S3HF?
    Typical applications include power supplies, motor control systems, renewable energy systems, industrial power management, and automotive systems.
  9. Where can I find detailed specifications for the NTHL033N65S3HF?
    Detailed specifications can be found on the onsemi official website, as well as through distributors like Digi-Key and TME.
  10. What is the maximum drain current (Idm) of the NTHL033N65S3HF?
    The maximum drain current (Idm) is 175 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:33mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:188 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6720 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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