Overview
The NTF3055-100T1G-IRH1 is a power N-Channel MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This device is housed in the SOT-223 package and is Pb-free and RoHS compliant. It is particularly suited for use in power supplies, converters, power motor controls, and bridge circuits. The NTF3055-100T1G-IRH1 is also available with an NVF prefix for automotive and other applications requiring unique site and control change requirements, and it is AEC-Q101 qualified and PPAP capable.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage (RGS = 10 MΩ) | VDGR | 60 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Gate-to-Source Voltage - Non-repetitive (tp ≤ 10 ms) | VGS | ±30 | Vpk |
| Drain Current - Continuous @ TA = 25°C | ID | 3.0 | Adc |
| Drain Current - Continuous @ TA = 100°C | ID | 1.4 | Adc |
| Drain Current - Single Pulse (tp ≤ 10 μs) | IDM | 9.0 | Apk |
| Total Power Dissipation @ TA = 25°C (Note 1) | PD | 2.1 | W |
| Total Power Dissipation @ TA = 25°C (Note 2) | PD | 1.3 | W |
| Derate above 25°C | - | 0.014 | W/°C |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 74 | mJ |
| Thermal Resistance - Junction-to-Ambient (Note 1) | RθJA | 72.3 | °C/W |
| Thermal Resistance - Junction-to-Ambient (Note 2) | RθJA | 114 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 1.5 Adc) | RDS(on) | 88-110 | mΩ |
Key Features
- Pb-free and RoHS compliant
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
- Low voltage, high speed switching capabilities
- High drain current of up to 3.0 A
- High drain-to-source voltage of up to 60 V
- Low on-resistance (RDS(on)) of 88-110 mΩ
- High thermal stability with a junction temperature range of -55°C to 175°C
Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
Q & A
- What is the maximum drain-to-source voltage of the NTF3055-100T1G-IRH1?
The maximum drain-to-source voltage is 60 Vdc.
- What is the continuous drain current at 25°C for this MOSFET?
The continuous drain current at 25°C is 3.0 Adc.
- Is the NTF3055-100T1G-IRH1 Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What are the typical applications for this MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the maximum junction temperature for this device?
The maximum junction temperature is 175°C.
- What is the static drain-to-source on-resistance of the NTF3055-100T1G-IRH1?
The static drain-to-source on-resistance (RDS(on)) is 88-110 mΩ at VGS = 10 Vdc and ID = 1.5 Adc.
- Is the NTF3055-100T1G-IRH1 suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the thermal resistance of the NTF3055-100T1G-IRH1 when surface mounted to an FR4 board?
The thermal resistance (RθJA) is 72.3°C/W when surface mounted to an FR4 board using a 1 oz. Cu area, and 114°C/W with minimum recommended pad size.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260°C.
- What is the single pulse drain-to-source avalanche energy of the NTF3055-100T1G-IRH1?
The single pulse drain-to-source avalanche energy (EAS) is 74 mJ.
