Overview
The NTD5406NT4G is a high-performance Power MOSFET produced by onsemi. This single N-Channel MOSFET is housed in a DPAK package and is designed to handle high current and voltage requirements. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 70 | A |
| Continuous Drain Current (TC = 125°C) | ID | 40 | A |
| Power Dissipation (TC = 25°C) | PD | 100 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 150 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to 175 | °C |
| Source Current (Body Diode) Pulsed | IS | 63.5 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 450 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 1.5 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 49 | °C/W |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 8.7 mΩ | mΩ |
Key Features
- Low RDS(on): The NTD5406NT4G features a low drain-to-source on resistance, typically 8.7 mΩ at VGS = 10 V and ID = 30 A, which minimizes power losses.
- High Current Capability: It can handle a continuous drain current of up to 70 A at TC = 25°C and 40 A at TC = 125°C.
- Low Gate Charge: The device has a low total gate charge, which enhances switching performance.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free and RoHS Compliant: Ensures environmental sustainability and compliance with regulatory standards.
Applications
- Electronic Brake Systems: Used in advanced braking systems due to its high reliability and performance.
- Electronic Power Steering: Ideal for power steering systems that require high current handling and low on-resistance.
- Bridge Circuits: Suitable for bridge configurations in power conversion and motor control applications.
Q & A
- What is the maximum drain-to-source voltage of the NTD5406NT4G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the continuous drain current at 25°C and 125°C?
The continuous drain current is 70 A at TC = 25°C and 40 A at TC = 125°C.
- What is the typical drain-to-source on resistance?
The typical drain-to-source on resistance (RDS(on)) is 8.7 mΩ at VGS = 10 V and ID = 30 A.
- Is the NTD5406NT4G AEC-Q101 qualified?
Yes, the NTD5406NT4G is AEC-Q101 qualified and PPAP capable.
- What are the operating junction and storage temperatures?
The operating junction and storage temperatures range from −55°C to 175°C.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- What are some typical applications of the NTD5406NT4G?
Typical applications include electronic brake systems, electronic power steering, and bridge circuits.
- Is the NTD5406NT4G Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 1.5°C/W.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 450 mJ.
