Overview
The onsemi NTD360N80S3Z is a high-performance, N-Channel MOSFET from the SUPERFET III family. This device is designed for high-power density applications and features advanced characteristics such as ultra-low gate charge, low stored energy in output capacitance, and optimized capacitance. It is particularly suited for demanding power electronics applications that require fast switching, low conduction loss, and high reliability. The NTD360N80S3Z operates at 800 V with a maximum junction temperature of 150°C and is RoHS compliant, ensuring it meets modern environmental standards.
Key Specifications
| Category | Parameter | Value | Unit |
|---|---|---|---|
| FET Type | N-Channel | ||
| Technology | MOSFET (Metal Oxide) | ||
| Drain to Source Voltage (Vdss) | 800 V | V | |
| Current - Continuous Drain (Id) @ 25°C | 13 A | A | |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V | V | |
| Rds On (Max) @ Id, Vgs | 360 mΩ @ 6.5 A, 10 V | mΩ | |
| Vgs(th) (Max) @ Id | 3.8 V @ 300 µA | V | |
| Vgs (Max) | ±20 V | V | |
| Gate Charge (Qg) (Max) @ Vgs | 25.3 nC @ 10 V | nC | |
| Input Capacitance (Ciss) (Max) @ Vds | 1143 pF @ 400 V | pF | |
| Power Dissipation (Max) | 96 W (Tc) | W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | °C | |
| Mounting Type | Surface Mount | ||
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Key Features
- Ultra Low Gate Charge (Typ. Qg = 25.3 nC)
- Low Stored Energy in Output Capacitance (Eoss = 2.72 µJ @ 400 V)
- Optimized capacitance
- ESD Improved Capability with Zener Diode
- Typical RDS(on) = 300 mΩ
- RoHS Compliant
- 100% Avalanche Tested
- Internal Gate Resistance: 4 Ω
Applications
The NTD360N80S3Z is suitable for various high-performance power electronics applications, including:
- Customized drive systems
- Robust power supplies
- Seamless control integration
- Integrated automation systems
- Sustainable energy solutions
- Efficient power management
- Precision control equipment
- Reliable power sources
- High-performance inverters
- LED Lighting
- Audio and industrial power supplies
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the NTD360N80S3Z?
The maximum drain-to-source voltage (Vdss) is 800 V. - What is the continuous drain current (Id) at 25°C?
The continuous drain current (Id) at 25°C is 13 A. - What is the typical on-resistance (RDS(on)) of the NTD360N80S3Z?
The typical on-resistance (RDS(on)) is 300 mΩ. - Is the NTD360N80S3Z RoHS compliant?
Yes, the NTD360N80S3Z is RoHS compliant. - What are the package types available for the NTD360N80S3Z?
The package types available are TO-252-3, DPAK (2 Leads + Tab), and SC-63. - What is the maximum operating temperature of the NTD360N80S3Z?
The maximum operating temperature is 150°C. - What is the gate charge (Qg) of the NTD360N80S3Z?
The gate charge (Qg) is typically 25.3 nC at 10 V. - What are some of the key applications of the NTD360N80S3Z?
Key applications include customized drive systems, robust power supplies, seamless control integration, and high-performance inverters. - Does the NTD360N80S3Z have improved ESD capability?
Yes, the NTD360N80S3Z has improved ESD capability with an internal Zener diode. - What is the maximum power dissipation of the NTD360N80S3Z?
The maximum power dissipation is 96 W at 25°C.
