Overview
The NTB110N65S3HF is a high-voltage N-Channel MOSFET from ON Semiconductor's SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it highly suitable for various power systems requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Continuous Drain Current (ID) | 30 A (at TC = 25°C), 19.5 A (at TC = 100°C) | A |
| Pulsed Drain Current (IDM) | 69 A | A |
| Static Drain to Source On Resistance (RDS(on)) | Typ. 98 mΩ, Max. 110 mΩ at VGS = 10 V, ID = 15 A | mΩ |
| Total Gate Charge (Qg) | Typ. 62 nC | nC |
| Power Dissipation (PD) | 240 W (at TC = 25°C) | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 °C | °C |
| Thermal Resistance, Junction to Case (RθJC) | Max. 0.52 °C/W | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | Max. 45 °C/W | °C/W |
Key Features
- High voltage rating of 650 V at TJ = 150°C
- Ultra-low on-resistance (Typ. RDS(on) = 98 mΩ)
- Ultra-low gate charge (Typ. Qg = 62 nC)
- Low effective output capacitance (Typ. Coss(eff.) = 522 pF)
- 100% avalanche tested
- Pb-free and RoHS compliant
- Optimized reverse recovery performance of the body diode
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Electric Vehicle (EV) Chargers
- Uninterruptible Power Supplies (UPS) / Solar Systems
Q & A
- What is the maximum drain to source voltage of the NTB110N65S3HF MOSFET?
The maximum drain to source voltage (VDSS) is 650 V at TJ = 150°C.
- What is the typical on-resistance of the NTB110N65S3HF?
The typical static drain to source on-resistance (RDS(on)) is 98 mΩ at VGS = 10 V, ID = 15 A.
- What is the maximum continuous drain current of the NTB110N65S3HF?
The maximum continuous drain current (ID) is 30 A at TC = 25°C and 19.5 A at TC = 100°C.
- What is the thermal resistance from junction to case (RθJC) of the NTB110N65S3HF?
The thermal resistance from junction to case (RθJC) is maximum 0.52 °C/W).
- Is the NTB110N65S3HF Pb-free and RoHS compliant?
- What are some typical applications of the NTB110N65S3HF MOSFET?
Typical applications include telecom/server power supplies, industrial power supplies, EV chargers, and UPS/solar systems).
- What is the maximum operating temperature of the NTB110N65S3HF?
The maximum operating temperature is +150 °C).
- What is the power dissipation (PD) of the NTB110N65S3HF at TC = 25°C?
The power dissipation (PD) is 240 W at TC = 25°C).
- Does the NTB110N65S3HF have optimized reverse recovery performance of the body diode?
- What is the typical gate charge (Qg) of the NTB110N65S3HF?
The typical total gate charge (Qg) is 62 nC at VGS = 10 V, ID = 15 A).
- What package type is the NTB110N65S3HF available in?
The NTB110N65S3HF is available in a D2PAK (TO-263, 3-lead) package).
