Overview
The NTB082N65S3F is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET III family. This MOSFET utilizes charge-balance technology to achieve outstanding low on-resistance and lower gate-charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. This makes it highly suitable for various power systems requiring miniaturization and higher efficiency. The SUPERFET III FRFET MOSFET also features optimized reverse recovery performance of the body diode, which can eliminate the need for additional components and improve system reliability.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Max) | 650 V |
| ID (Max) | 40 A |
| RDS(on) (Max @ VGS = 10 V) | 82 mΩ |
| VGS (Max) | 30 V |
| VGS(th) (Max) | 5 V |
| Qg (Typ @ VGS = 10 V) | 81 nC |
| Coss(eff.) (Typ) | 722 pF |
| Package Type | D2PAK-3 / TO-263-2 |
| Operating Junction Temperature | -55°C to 150°C |
Key Features
- Ultra Low Gate Charge (Typ. Qg = 81 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
- Optimized Capacitance
- Excellent body diode performance (low Qrr, robust body diode)
- Typ. RDS(on) = 70 mΩ
- 100% Avalanche Tested
- RoHS Compliant
Applications
- Telecommunication
- Cloud systems
- Industrial applications
- Telecom power
- Server power
- Solar / UPS systems
- EV chargers
Q & A
- What is the maximum drain-source voltage (VDS) of the NTB082N65S3F MOSFET?
The maximum drain-source voltage (VDS) is 650 V.
- What is the maximum drain current (ID) of the NTB082N65S3F MOSFET?
The maximum drain current (ID) is 40 A.
- What is the typical on-resistance (RDS(on)) of the NTB082N65S3F MOSFET?
The typical on-resistance (RDS(on)) is 82 mΩ at VGS = 10 V.
- What is the package type of the NTB082N65S3F MOSFET?
The package type is D2PAK-3 / TO-263-2.
- Is the NTB082N65S3F MOSFET RoHS compliant?
Yes, the NTB082N65S3F MOSFET is RoHS compliant.
- What are some of the key applications for the NTB082N65S3F MOSFET?
Key applications include telecommunication, cloud systems, industrial applications, telecom power, server power, solar / UPS systems, and EV chargers.
- What is the typical gate charge (Qg) of the NTB082N65S3F MOSFET?
The typical gate charge (Qg) is 81 nC at VGS = 10 V.
- Does the NTB082N65S3F MOSFET have optimized body diode performance?
Yes, the NTB082N65S3F MOSFET features excellent body diode performance with low Qrr and a robust body diode.
- Is the NTB082N65S3F MOSFET 100% avalanche tested?
Yes, the NTB082N65S3F MOSFET is 100% avalanche tested.
- What is the operating junction temperature range of the NTB082N65S3F MOSFET?
The operating junction temperature range is -55°C to 150°C.
