Overview
The NTA4001NT1G is a single N-Channel MOSFET produced by onsemi, designed for small signal applications. It features gate ESD protection and is packaged in a small SC-75 (SOT-416) footprint, making it ideal for space-constrained designs. This MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments. It is also RoHS compliant and Pb-free, aligning with modern environmental standards.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | V |
| Gate-to-Source Voltage | VGS | ±10 | V |
| Continuous Drain Current | ID | 238 | mA |
| Power Dissipation | PD | 300 | mW |
| Pulsed Drain Current | IDM | 714 | mA |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| Continuous Source Current (Body Diode) | ISD | 238 | mA |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Gate Threshold Voltage | VGS(TH) | 0.5 to 1.5 | V |
| Drain-to-Source On Resistance | RDS(on) | 1.5 to 3.0 | Ω @ VGS = 4.5 V, ID = 10 mA |
| Input Capacitance | CISS | 11.5 to 20 | pF |
Key Features
- Low Gate Charge for Fast Switching
- Small 1.6 x 1.6 mm Footprint (SC-75 package)
- ESD Protected Gate
- AEC-Q101 Qualified and PPAP Capable
- Pb-free and RoHS Compliant
Applications
- Power Management Load Switch
- Level Shift
- Portable Applications:
- Cell Phones
- Media Players
- Digital Cameras
- PDA’s
- Video Games
- Hand Held Computers
Q & A
- What is the maximum drain-to-source voltage of the NTA4001NT1G?
The maximum drain-to-source voltage (VDSS) is 20 V.
- What is the continuous drain current rating of this MOSFET?
The continuous drain current (ID) is 238 mA.
- Is the NTA4001NT1G RoHS compliant?
- What are the typical applications of the NTA4001NT1G?
Typical applications include power management load switches, level shifts, and various portable devices such as cell phones, media players, and digital cameras.
- What is the gate threshold voltage range of this MOSFET?
The gate threshold voltage (VGS(TH)) ranges from 0.5 to 1.5 V.
- What is the maximum operating junction temperature of the NTA4001NT1G?
The maximum operating junction temperature (TJ) is 150°C.
- Is the NTA4001NT1G AEC-Q101 qualified?
- What is the typical drain-to-source on resistance of this MOSFET?
The typical drain-to-source on resistance (RDS(on)) is 1.5 to 3.0 Ω at VGS = 4.5 V and ID = 10 mA.
- What is the input capacitance of the NTA4001NT1G?
The input capacitance (CISS) is 11.5 to 20 pF.
- What package type is used for the NTA4001NT1G?
The NTA4001NT1G is packaged in a SC-75 (SOT-416) package.
