Overview
The NJVMJD127T4G is a PNP complementary Darlington power transistor produced by onsemi. This device is designed for general-purpose amplifier and low-speed switching applications. It is part of the MJD127 series, which includes surface mount replacements for various older transistor series such as the 2N6040-2N6045 and TIP120-TIP127 series. The NJVMJD127T4G is packaged in a DPAK (Pb-Free) case, making it suitable for surface mount applications.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current Continuous | IC | 8 | Adc |
| Base Current | IB | 120 | mAdc |
| Total Power Dissipation @ TC = 25°C | PD | 20 | W |
| Thermal Resistance, Junction-to-Case | RJC | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 71.4 | °C/W |
| DC Current Gain (hFE) @ IC = 4 Adc, VCE = 4 Vdc | hFE | 1000 - 12000 | - |
| Collector-Emitter Saturation Voltage @ IC = 8 Adc, IB = 80 mAdc | VCE(sat) | 2 - 4 | Vdc |
| Base-Emitter Saturation Voltage @ IC = 8 Adc, IB = 80 mAdc | VBE(sat) | 4.5 | Vdc |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Monolithic construction with built-in base-emitter shunt resistors.
- High DC current gain: hFE = 2500 (Typ) @ IC = 4.0 Adc.
- ESD ratings: Human Body Model > 8000 V, Machine Model > 400 V.
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
Applications
The NJVMJD127T4G is suitable for a variety of applications, including:
- General-purpose amplifiers.
- Low-speed switching applications.
- Automotive systems requiring AEC-Q101 qualification.
- Industrial control systems.
- Power management circuits.
Q & A
- What is the collector-emitter voltage rating of the NJVMJD127T4G?
The collector-emitter voltage rating is 100 Vdc.
- What is the maximum collector current for the NJVMJD127T4G?
The maximum collector current is 8 Adc.
- What is the typical DC current gain of the NJVMJD127T4G?
The typical DC current gain (hFE) is 2500 @ IC = 4.0 Adc.
- Is the NJVMJD127T4G RoHS compliant?
- What are the thermal resistance values for the NJVMJD127T4G?
The thermal resistance, junction-to-case (RJC), is 6.25 °C/W, and the thermal resistance, junction-to-ambient (RJA), is 71.4 °C/W.
- What are the ESD ratings for the NJVMJD127T4G?
The ESD ratings are Human Body Model > 8000 V and Machine Model > 400 V.
- Is the NJVMJD127T4G suitable for automotive applications?
- What is the package type of the NJVMJD127T4G?
The package type is DPAK (Pb-Free).
- What are the base-emitter saturation voltage and collector-emitter saturation voltage for the NJVMJD127T4G?
The base-emitter saturation voltage (VBE(sat)) is 4.5 Vdc, and the collector-emitter saturation voltage (VCE(sat)) is 2-4 Vdc.
- What is the operating and storage junction temperature range for the NJVMJD127T4G?
The operating and storage junction temperature range is -65 to +150 °C.
