Overview
The NJVMJD122T4G-VF01 is a complementary Darlington power transistor produced by onsemi, designed for general-purpose amplifier and low-speed switching applications. This transistor is packaged in a DPAK (TO-252) case, suitable for surface mount applications. It is a monolithic construction with built-in base-emitter shunt resistors, making it a reliable choice for various electronic systems.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Collector-Base Voltage | VCB | 100 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Continuous Collector Current | IC | 8 | Adc |
| Peak Collector Current | IC | 16 | Adc |
| Base Current | IB | 120 | mAdc |
| Total Power Dissipation at TC = 25°C | PD | 20 | W |
| Total Power Dissipation at TA = 25°C | PD | 1.75 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −65 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 71.4 | °C/W |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series, and TIP125-TIP127 series.
- Monolithic construction with built-in base-emitter shunt resistors.
- High DC current gain: hFE = 2500 (Typ) @ IC = 4.0 Adc.
- ESD ratings: Human Body Model > 8000 V, Machine Model > 400 V.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
The NJVMJD122T4G-VF01 is suitable for a variety of applications, including general-purpose amplifiers, low-speed switching circuits, and automotive systems. Its high current gain and robust thermal characteristics make it an ideal choice for power management and control in industrial, automotive, and consumer electronics.
Q & A
- What is the maximum collector-emitter voltage of the NJVMJD122T4G-VF01?
The maximum collector-emitter voltage (VCEO) is 100 Vdc. - What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is 8 Adc. - What is the thermal resistance from junction to case for this transistor?
The thermal resistance from junction to case (RJC) is 6.25 °C/W. - Is the NJVMJD122T4G-VF01 RoHS compliant?
Yes, the transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What are the ESD ratings for this transistor?
The ESD ratings are > 8000 V for the Human Body Model and > 400 V for the Machine Model. - What is the operating junction temperature range for this transistor?
The operating and storage junction temperature range is −65 to +150 °C. - Can the NJVMJD122T4G-VF01 be used in automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. - What is the typical DC current gain of this transistor?
The typical DC current gain (hFE) is 2500 at IC = 4 Adc and VCE = 4 Vdc. - What package type is the NJVMJD122T4G-VF01 available in?
The transistor is packaged in a DPAK (TO-252) case. - What are some of the replacement series for this transistor?
It can replace the 2N6040-2N6045 series, TIP120-TIP122 series, and TIP125-TIP127 series.
