Overview
The MJD127G is a PNP Darlington Bipolar Power Transistor produced by onsemi. It is designed for general purpose amplifier and low speed switching applications. This transistor is part of the MJD127 series, which includes complementary devices such as the MJD122 (NPN). The MJD127G is known for its high DC current gain and monolithic construction with built-in base-emitter shunt resistors, making it a reliable choice for various electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | Vdc |
| Collector-Base Voltage (VCB) | 100 | Vdc |
| Emitter-Base Voltage (VEB) | 5 | Vdc |
| Collector Current Continuous (IC) | 8 | A |
| Collector Current Peak (IC) | 16 | A |
| Base Current (IB) | 120 | mAdc |
| Total Power Dissipation @ TC = 25°C | 20 | W |
| Total Power Dissipation @ TA = 25°C | 1.75 | W |
| Operating and Storage Junction Temperature Range | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Case (RJC) | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RJA) | 71.4 | °C/W |
| DC Current Gain (hFE) @ IC = 4.0 Adc | 2500 (Typ) |
Key Features
- Lead formed for surface mount applications in plastic sleeves.
- Surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series, and TIP125-TIP127 series.
- Monolithic construction with built-in base-emitter shunt resistors.
- High DC current gain: hFE = 2500 (Typ) @ IC = 4.0 Adc.
- Epoxy meets UL 94 V-0 @ 0.125 in.
- ESD ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
Applications
The MJD127G is suitable for a variety of applications, including:
- General purpose amplifiers.
- Low speed switching applications.
- Automotive systems (with NJV prefix).
- Industrial control systems.
- Power supplies and power management circuits.
Q & A
- What is the collector-emitter voltage rating of the MJD127G?
The collector-emitter voltage rating of the MJD127G is 100 Vdc.
- What is the continuous collector current rating of the MJD127G?
The continuous collector current rating of the MJD127G is 8 A.
- What is the typical DC current gain of the MJD127G?
The typical DC current gain (hFE) of the MJD127G is 2500 at IC = 4.0 Adc.
- Is the MJD127G RoHS compliant?
- What are the thermal resistance values for the MJD127G?
The thermal resistance, junction-to-case (RJC), is 6.25 °C/W, and the thermal resistance, junction-to-ambient (RJA), is 71.4 °C/W.
- What are the ESD ratings for the MJD127G?
The ESD ratings for the MJD127G are Human Body Model, 3B > 8000 V, and Machine Model, C > 400 V.
- Is the MJD127G suitable for automotive applications?
- What is the operating and storage junction temperature range for the MJD127G?
The operating and storage junction temperature range for the MJD127G is -65 to +150 °C.
- What package types are available for the MJD127G?
The MJD127G is available in DPAK packages, including lead formed for surface mount applications and reel packaging options.
- Can the MJD127G replace other transistor series?
