MJD127T4G
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onsemi MJD127T4G

Manufacturer No:
MJD127T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP DARL 100V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD127T4G is a PNP Darlington power transistor manufactured by onsemi. This transistor is part of the MJD127 series, known for its high current gain and robust performance. It is packaged in a DPAK (TO-252) case, which is lead-free and suitable for surface mount applications. The MJD127T4G is designed to handle high collector currents and is often used in power switching and amplification roles.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO100Vdc
Collector-Base VoltageVCB100Vdc
Emitter-Base VoltageVEB5Vdc
Collector Current Continuous/PeakIC8 / 16A
Base CurrentIB120mAdc
Total Power Dissipation @ TC = 25°CPD20W
Total Power Dissipation @ TA = 25°CPD1.75W
Thermal Resistance, Junction-to-CaseRJC6.25°C/W
Thermal Resistance, Junction-to-AmbientRJA71.4°C/W
Operating and Storage Junction Temperature RangeTJ, Tstg−65 to +150°C
Collector-Emitter Sustaining VoltageVCEO(sus)100Vdc
Base-Emitter On VoltageVBE(on)−2.8Vdc
Small-Signal Current Gainhfe300

Key Features

  • High Current Gain: The MJD127T4G offers a high DC current gain, making it suitable for applications requiring significant current amplification.
  • High Collector Current: Capable of handling continuous collector currents up to 8 A and peak currents up to 16 A.
  • Robust Thermal Performance: With thermal resistances of 6.25 °C/W (junction-to-case) and 71.4 °C/W (junction-to-ambient), it ensures reliable operation under various thermal conditions.
  • Wide Operating Temperature Range: Operates within a junction temperature range of −65 to +150 °C, making it versatile for different environmental conditions.
  • Lead-Free Packaging: Packaged in a lead-free DPAK (TO-252) case, suitable for surface mount applications and compliant with environmental regulations.

Applications

The MJD127T4G is widely used in various power switching and amplification applications, including:

  • Power Supplies: For high-current switching in power supply units.
  • Motor Control: In motor drive circuits where high current gain is necessary.
  • Audible Alarm and Siren Drivers: For driving high-current loads in alarm systems.
  • Relay and Solenoid Drivers: For controlling relays and solenoids in industrial and automotive applications.

Q & A

  1. What is the collector-emitter voltage rating of the MJD127T4G?
    The collector-emitter voltage rating is 100 Vdc.
  2. What is the maximum continuous collector current of the MJD127T4G?
    The maximum continuous collector current is 8 A.
  3. What is the thermal resistance from junction to case for the MJD127T4G?
    The thermal resistance from junction to case is 6.25 °C/W.
  4. What is the operating junction temperature range for the MJD127T4G?
    The operating junction temperature range is −65 to +150 °C.
  5. What type of packaging does the MJD127T4G use?
    The MJD127T4G is packaged in a lead-free DPAK (TO-252) case.
  6. What are some common applications of the MJD127T4G?
    Common applications include power supplies, motor control, audible alarm and siren drivers, and relay and solenoid drivers.
  7. What is the base-emitter on voltage for the MJD127T4G?
    The base-emitter on voltage is approximately −2.8 Vdc.
  8. How much total power can the MJD127T4G dissipate at 25°C?
    The total power dissipation at 25°C is 20 W for the case temperature and 1.75 W for the ambient temperature.
  9. Is the MJD127T4G suitable for surface mount applications?
    Yes, the MJD127T4G is suitable for surface mount applications due to its DPAK packaging.
  10. What is the small-signal current gain of the MJD127T4G?
    The small-signal current gain (hfe) is approximately 300.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 80mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD127T4G MJD128T4G MJD117T4G MJD122T4G MJD127T4
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Active Active
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 2 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 120 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A 4V @ 80mA, 8A 3V @ 40mA, 4A 4V @ 80mA, 8A 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA 5mA 20µA 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V 1000 @ 4A, 4V 1000 @ 2A, 3V 1000 @ 4A, 4V 1000 @ 4A, 4V
Power - Max 1.75 W 1.75 W 1.75 W 1.75 W 20 W
Frequency - Transition 4MHz 4MHz 25MHz 4MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK DPAK

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