MJD127T4G
  • Share:

onsemi MJD127T4G

Manufacturer No:
MJD127T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP DARL 100V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD127T4G is a PNP Darlington power transistor manufactured by onsemi. This transistor is part of the MJD127 series, known for its high current gain and robust performance. It is packaged in a DPAK (TO-252) case, which is lead-free and suitable for surface mount applications. The MJD127T4G is designed to handle high collector currents and is often used in power switching and amplification roles.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO100Vdc
Collector-Base VoltageVCB100Vdc
Emitter-Base VoltageVEB5Vdc
Collector Current Continuous/PeakIC8 / 16A
Base CurrentIB120mAdc
Total Power Dissipation @ TC = 25°CPD20W
Total Power Dissipation @ TA = 25°CPD1.75W
Thermal Resistance, Junction-to-CaseRJC6.25°C/W
Thermal Resistance, Junction-to-AmbientRJA71.4°C/W
Operating and Storage Junction Temperature RangeTJ, Tstg−65 to +150°C
Collector-Emitter Sustaining VoltageVCEO(sus)100Vdc
Base-Emitter On VoltageVBE(on)−2.8Vdc
Small-Signal Current Gainhfe300

Key Features

  • High Current Gain: The MJD127T4G offers a high DC current gain, making it suitable for applications requiring significant current amplification.
  • High Collector Current: Capable of handling continuous collector currents up to 8 A and peak currents up to 16 A.
  • Robust Thermal Performance: With thermal resistances of 6.25 °C/W (junction-to-case) and 71.4 °C/W (junction-to-ambient), it ensures reliable operation under various thermal conditions.
  • Wide Operating Temperature Range: Operates within a junction temperature range of −65 to +150 °C, making it versatile for different environmental conditions.
  • Lead-Free Packaging: Packaged in a lead-free DPAK (TO-252) case, suitable for surface mount applications and compliant with environmental regulations.

Applications

The MJD127T4G is widely used in various power switching and amplification applications, including:

  • Power Supplies: For high-current switching in power supply units.
  • Motor Control: In motor drive circuits where high current gain is necessary.
  • Audible Alarm and Siren Drivers: For driving high-current loads in alarm systems.
  • Relay and Solenoid Drivers: For controlling relays and solenoids in industrial and automotive applications.

Q & A

  1. What is the collector-emitter voltage rating of the MJD127T4G?
    The collector-emitter voltage rating is 100 Vdc.
  2. What is the maximum continuous collector current of the MJD127T4G?
    The maximum continuous collector current is 8 A.
  3. What is the thermal resistance from junction to case for the MJD127T4G?
    The thermal resistance from junction to case is 6.25 °C/W.
  4. What is the operating junction temperature range for the MJD127T4G?
    The operating junction temperature range is −65 to +150 °C.
  5. What type of packaging does the MJD127T4G use?
    The MJD127T4G is packaged in a lead-free DPAK (TO-252) case.
  6. What are some common applications of the MJD127T4G?
    Common applications include power supplies, motor control, audible alarm and siren drivers, and relay and solenoid drivers.
  7. What is the base-emitter on voltage for the MJD127T4G?
    The base-emitter on voltage is approximately −2.8 Vdc.
  8. How much total power can the MJD127T4G dissipate at 25°C?
    The total power dissipation at 25°C is 20 W for the case temperature and 1.75 W for the ambient temperature.
  9. Is the MJD127T4G suitable for surface mount applications?
    Yes, the MJD127T4G is suitable for surface mount applications due to its DPAK packaging.
  10. What is the small-signal current gain of the MJD127T4G?
    The small-signal current gain (hfe) is approximately 300.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 80mA, 8A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:4MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$0.92
336

Please send RFQ , we will respond immediately.

Same Series
NJVMJD122T4G-VF01
NJVMJD122T4G-VF01
TRANS NPN DARL 100V 8A DPAK
MJD127T4G
MJD127T4G
TRANS PNP DARL 100V 8A DPAK
MJD122T4G
MJD122T4G
TRANS NPN DARL 100V 8A DPAK
MJD122G
MJD122G
TRANS NPN DARL 100V 8A DPAK
MJD127G
MJD127G
TRANS PNP DARL 100V 8A DPAK

Similar Products

Part Number MJD127T4G MJD128T4G MJD117T4G MJD122T4G MJD127T4
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Active Active Active Active Active
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 2 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 120 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A 4V @ 80mA, 8A 3V @ 40mA, 4A 4V @ 80mA, 8A 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA 5mA 20µA 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V 1000 @ 4A, 4V 1000 @ 2A, 3V 1000 @ 4A, 4V 1000 @ 4A, 4V
Power - Max 1.75 W 1.75 W 1.75 W 1.75 W 20 W
Frequency - Transition 4MHz 4MHz 25MHz 4MHz -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK DPAK

Related Product By Categories

TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC