Overview
The MJD122T4G is a high-performance NPN Darlington power transistor manufactured by onsemi. This component is designed for general-purpose amplifier and low-speed switching applications. It features a monolithic construction with built-in base-emitter shunt resistors, making it a reliable choice for various electronic circuits. The transistor is packaged in a TO-252-2 (DPAK) surface mount package, which is suitable for surface mount applications and replaces older through-hole transistors like the 2N6040-2N6045 and TIP120-TIP122 series.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | Vdc |
| Collector-Base Voltage (VCB) | 100 | Vdc |
| Emitter-Base Voltage (VEB) | 5 | Vdc |
| Collector Current Continuous (IC) | 8 | A |
| Base Current (IB) | 120 | mA |
| Total Power Dissipation @ TC = 25°C | 20 | W |
| Total Power Dissipation @ TA = 25°C | 1.75 | W |
| Operating and Storage Junction Temperature Range | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Case (RJC) | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RJA) | 71.4 | °C/W |
| DC Current Gain (hFE) @ IC = 4 A | 2500 (Typ) |
Key Features
- Monolithic construction with built-in base-emitter shunt resistors.
- High DC current gain: hFE = 2500 (Typ) @ IC = 4.0 A.
- Surface mount replacements for 2N6040-2N6045 series, TIP120-TIP122 series, and TIP125-TIP127 series.
- Lead formed for surface mount applications in plastic sleeves.
- ESD ratings: Human Body Model, 3B > 8000 V.
- Epoxy meets UL 94 V-0 @ 0.125 in.
Applications
The MJD122T4G is suitable for a variety of applications, including general-purpose amplifiers and low-speed switching circuits. It can be used in automotive, industrial, and consumer electronics where high current gain and reliability are required. Specific use cases include motor control, power supplies, and audio amplifiers.
Q & A
- What is the collector-emitter voltage rating of the MJD122T4G?
The collector-emitter voltage rating is 100 Vdc. - What is the typical DC current gain of the MJD122T4G?
The typical DC current gain (hFE) is 2500 at IC = 4.0 A. - What package type is the MJD122T4G available in?
The MJD122T4G is available in a TO-252-2 (DPAK) surface mount package. - What are the operating and storage junction temperature ranges for the MJD122T4G?
The operating and storage junction temperature range is -65 to +150 °C. - What is the thermal resistance, junction-to-case (RJC) for the MJD122T4G?
The thermal resistance, junction-to-case (RJC) is 6.25 °C/W. - Is the MJD122T4G RoHS compliant?
Yes, the MJD122T4G is RoHS compliant. - What are some common applications for the MJD122T4G?
Common applications include general-purpose amplifiers, low-speed switching circuits, motor control, power supplies, and audio amplifiers. - What is the maximum collector current for the MJD122T4G?
The maximum collector current is 8 A. - What is the base current rating for the MJD122T4G?
The base current rating is 120 mA. - Does the MJD122T4G have built-in base-emitter shunt resistors?
Yes, the MJD122T4G has built-in base-emitter shunt resistors).
