Overview
The onsemi MJD112T4G is a complementary Darlington power transistor designed for general-purpose power and switching applications. This NPN transistor is part of the MJD112 series and is housed in a TO-252-2 (DPAK) package, making it suitable for surface mount applications. The device is Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | Vdc |
| Collector-Base Voltage (VCB) | 100 | Vdc |
| Emitter-Base Voltage (VEB) | 5 | Vdc |
| Collector Current (IC) | 2 (Continuous), 4 (Peak) | A |
| Base Current (IB) | 50 | mA |
| Total Power Dissipation at TC = 25°C | 20 | W |
| Total Power Dissipation at TA = 25°C | 1.75 | W |
| Operating and Storage Junction Temperature Range | -65 to +150 | °C |
| Package Type | TO-252-2 (DPAK) |
Key Features
- Lead formed for surface mount applications in plastic sleeves (no suffix) and straight lead version in plastic sleeves (“−1” suffix).
- Electrically similar to popular TIP31 and TIP32 series.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant.
- Designed for general-purpose power and switching such as output or driver stages in applications like switching regulators, converters, and power amplifiers.
Applications
- Switching regulators and converters
- Power amplifiers
- Output or driver stages in various power and switching applications
- Automotive and other applications requiring AEC-Q101 qualification and PPAP capability
Q & A
- What is the collector-emitter voltage rating of the MJD112T4G transistor?
The collector-emitter voltage (VCEO) rating is 100 Vdc.
- What is the maximum collector current for the MJD112T4G?
The maximum continuous collector current (IC) is 2 A, and the peak collector current is 4 A.
- What package type is the MJD112T4G transistor available in?
The transistor is available in a TO-252-2 (DPAK) package.
- Is the MJD112T4G transistor RoHS compliant?
Yes, the MJD112T4G is Pb-free and RoHS compliant.
- What are some typical applications for the MJD112T4G transistor?
Typical applications include switching regulators, converters, power amplifiers, and output or driver stages in various power and switching applications.
- What is the operating junction temperature range for the MJD112T4G?
The operating and storage junction temperature range is -65°C to +150°C.
- Is the MJD112T4G suitable for automotive applications?
Yes, the NJV prefix version of the MJD112T4G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other similar applications.
- What is the total power dissipation at TC = 25°C for the MJD112T4G?
The total power dissipation at TC = 25°C is 20 W.
- How does the MJD112T4G compare to other popular transistors?
The MJD112T4G is electrically similar to the popular TIP31 and TIP32 series.
- What is the base current rating for the MJD112T4G transistor?
The base current (IB) rating is 50 mA.
